Abstract
The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
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Funded by the National Natural Science Foundation of China( Nos. 61201046 and 61306057), the Beijing Natural Science Foundation of China(Nos. 4162013, 2132023 and 4164082), the Beijing Postdoctoral Research Foundation(No. 2015ZZ-33), the Scientific Research Project of Beijing Educational Committee(No. KM201610005005), and the Scientific Research Foundation for Returned Overseas Chinese Scholars, State Education Ministry
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Wang, P., Zhu, H., Zhang, Y. et al. Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 33, 1360–1364 (2018). https://doi.org/10.1007/s11595-018-1975-9
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DOI: https://doi.org/10.1007/s11595-018-1975-9