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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

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Abstract

The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.

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Authors and Affiliations

  1. Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China

    Pengfei Wang  (汪鹏飞), Hui Zhu  (朱慧), Yingqiao Zhang, Shiwei Feng, Chunsheng Guo, Yamin Zhang & Xiao Meng

  2. National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Qiong Qi

Authors
  1. Pengfei Wang  (汪鹏飞)
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  2. Hui Zhu  (朱慧)
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  3. Yingqiao Zhang
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  4. Shiwei Feng
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  5. Chunsheng Guo
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  6. Yamin Zhang
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Correspondence to Hui Zhu  (朱慧).

Additional information

Funded by the National Natural Science Foundation of China( Nos. 61201046 and 61306057), the Beijing Natural Science Foundation of China(Nos. 4162013, 2132023 and 4164082), the Beijing Postdoctoral Research Foundation(No. 2015ZZ-33), the Scientific Research Project of Beijing Educational Committee(No. KM201610005005), and the Scientific Research Foundation for Returned Overseas Chinese Scholars, State Education Ministry

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Wang, P., Zhu, H., Zhang, Y. et al. Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 33, 1360–1364 (2018). https://doi.org/10.1007/s11595-018-1975-9

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  • DOI: https://doi.org/10.1007/s11595-018-1975-9

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