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Farfield Under Small Scattering Angle in the Rectangular Ag–Si–SiO2 Cavity

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Abstract

In this paper, the farfield under small scattering angle was investigated in the rectangular Ag–Si–SiO2 cavity by FDTD. The simulation results showed that Re(E) of the farfield was related to the monitoring wavelength and was a function of monitoring wavelengths. Moreover, in the rectangular Ag–Si–SiO2 cavity, the amplitude of Re(E) changed as the silicon height d varied, and maximum amplitude A of Re(E) could be approximated as the functions of transverse length l and thickness t of silver film under small scattering angle. Re(E) was independent of the transverse length w2 and the longitudinal length d of the cavity in RCM and was also irrelevant with the dielectric constant of silver films. The amplitude A of Re(E) increased as l and t of silver film increased.

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Funding

This work was supported by the National Natural Science Foundation of China (Grant Nos 61505052, 11074069, 61176116, and 51571088)

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Authors and Affiliations

  1. School of Physics & Electronics, Hunan University, Changsha, 410082, China

    Shu Li, Yang Zou, Huang-qing Liu, Shu-gui Chong, Yan-ping Xiao & Li-qun Wen

  2. Changsha, China

    Yang Zou

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  1. Shu Li
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  2. Yang Zou
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  3. Huang-qing Liu
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  4. Shu-gui Chong
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Correspondence to Huang-qing Liu.

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Li, S., Zou, Y., Liu, Hq. et al. Farfield Under Small Scattering Angle in the Rectangular Ag–Si–SiO2 Cavity. Plasmonics 14, 1385–1392 (2019). https://doi.org/10.1007/s11468-019-00928-7

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  • DOI: https://doi.org/10.1007/s11468-019-00928-7

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