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A Theoretical Study on the Influence of Carrier Generation on Drain-Source Current of Graphene Nanoscroll Transistors

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Abstract

A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included in the drain-source current. In addition, a simulation approach based on Monte Carlo is employed in order to calculate ionisation coefficient. Finally, the current is calculated including ionisation and not including ionisation and compared together at different conditions in order to investigate the effect of ionisation. The results show that this mechanism is not ignorable in graphene-based transistors as it was in most cases in silicon transistors. In addition, the breakdown voltage has been calculated analytically and compared with fabrication results of couterparts in silicon technology.

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Authors and Affiliations

  1. Computational Optics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    I. S. Amiri & P. Yupapin

  2. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    I. S. Amiri

  3. Department of Electrical Engineering, Faculty of Engineering, Sarvestan Branch, Islamic Azad University, Sarvestan, Iran

    Hossein Mohammadi

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  1. I. S. Amiri
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  2. Hossein Mohammadi
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  3. P. Yupapin
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Correspondence to I. S. Amiri.

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Amiri, I.S., Mohammadi, H. & Yupapin, P. A Theoretical Study on the Influence of Carrier Generation on Drain-Source Current of Graphene Nanoscroll Transistors. Plasmonics 14, 1329–1334 (2019). https://doi.org/10.1007/s11468-019-00920-1

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  • DOI: https://doi.org/10.1007/s11468-019-00920-1

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