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Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio

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Abstract

We have presented all-optical XOR, XNOR, and NOT gates using metal-insulator-metal (MIM)-coupled ring resonator. The performance of the device is evaluated by finite difference in time-domain (FDTD) method. The proposed gate utilizes a unique phenomenon of Fano resonance to excite logic OFF/ON state. Fano resonance has quite asymmetric resonance profile and the transmission spectrum of Fano profile abruptly drops to a minimum value at the resonance condition. Due to this unique resonance phenomenon, a large value of contrast ratio is obtained. The proposed XNOR gate offers a contrast ratio (C.R.) of 20.66 dB while XOR and NOT gates offer C.R. 12.8 and 18.8 dB respectively. The variation of contrast ratio is also studied against different input wavelength and it is reported that the obtained value of contrast ratio is an optimum value for the proposed structure. The device is compact sized with small dimension 0.31 λ02, where λ0 = 1.55 μm. The proposed device opens up the avenues for designing on-chip optical gates in the field of high-speed optical communication networks.

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Authors and Affiliations

  1. Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur, India

    Rukhsar Zafar & Sarfaraz Nawaz

  2. Malviya National Institute of Technology, Jaipur, India

    Mohammad Salim

Authors
  1. Rukhsar Zafar
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  2. Sarfaraz Nawaz
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  3. Mohammad Salim
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Correspondence to Rukhsar Zafar.

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Zafar, R., Nawaz, S. & Salim, M. Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio. Plasmonics 13, 1987–1994 (2018). https://doi.org/10.1007/s11468-018-0714-6

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  • DOI: https://doi.org/10.1007/s11468-018-0714-6

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