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Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure

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  • Condensed Matter Physics
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Chinese Science Bulletin

Abstract

Built-in electric field may enhance or retard the impurity-free vacancy disordering (IFVD) during rapid thermal annealing (RTP) by imposing a drift on charged point defects. Built-in electric field is at the interface between dielectric layer and top layer of the structure. Subsequent rapid thermal annealing leads to different intermixing results due to different field directions on InP cap layers in different doping types. Experimental results also show different influences of the built-in field on the two sublattices largely due to different charge numbers of point defects.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China

    YuPeng An & YiDing Wang

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    Ting Mei & ChengDong Xu

  3. Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore

    JingHua Teng

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  1. YuPeng An
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  2. Ting Mei
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  3. JingHua Teng
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  4. ChengDong Xu
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  5. YiDing Wang
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Correspondence to YuPeng An.

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An, Y., Mei, T., Teng, J. et al. Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure. Chin. Sci. Bull. 55, 1363–1366 (2010). https://doi.org/10.1007/s11434-010-0170-y

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  • DOI: https://doi.org/10.1007/s11434-010-0170-y

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