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Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing

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Abstract

In this work, by incorporating different electrodes (Ta/Ti) onto TaOx dielectric layer, we studied both the conductance reading and conductance updating (long term potentiation and depression) linearities in the two RRAM devices. Owing to the composition modulation (CM) mechanism, the Ta-electrode device shows better conductance reading and updating linearities. The RRAM device linearities directly influence the performance of the neural network when the devices are used as synapses. System evaluation of a two-layer neural network considering the conductance reading and updating linearity factors further confirm that both the training and inference accuracies of Ta electrode device are better than those of the Ti electrode one. We believe that this work could serve as a powerful reference for engineering synaptic devices with good linearity for neuromorphic computing applications.

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References

  1. H. S. P. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen, B. Lee, F. T. Chen, and M. J. Tsai, Proc. IEEE 100, 1951 (2012).

    Article  Google Scholar 

  2. X. Zhao, X. Zhang, D. Shang, Z. Wu, X. Xiao, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang, Q. Liu, and M. Liu, IEEE Electron Device Lett. 40, 554 (2019).

    Article  ADS  Google Scholar 

  3. W. Wang, Z. H. Wu, T. Shi, Y. Z. Wang, S. Liu, R. R. Cao, H. Xu, Q. Liu, and Q. J. Li, Sci. China-Phys. Mech. Astron. 62, 127821 (2019).

    Article  ADS  Google Scholar 

  4. V. Ravichandran, C. Li, A. Banagozar, J. J. Yang, and Q. Xia, Sci. China Inf. Sci. 61, 060423 (2018).

    Article  Google Scholar 

  5. N. K. Upadhyay, S. Joshi, and J. J. Yang, Sci. China Inf. Sci. 59, 061404 (2016).

    Article  Google Scholar 

  6. Y. J. Zhang, Q. Zheng, X. R. Zhu, Z. Yuan, and K. Xia, Sci. China-Phys. Mech. Astron. 63, 277531 (2020).

    Article  ADS  Google Scholar 

  7. Y. Chen, Y. K. Cheng, R. B. Zhu, F. F. Wang, H. T. Cheng, Z. H. Liu, C. X. Fan, Y. X. Xue, Z. C. Yu, J. K. Zhu, X. Y. Hu, and Q. H. Gong, Sci. China-Phys. Mech. Astron. 62, 044201 (2018).

    Article  Google Scholar 

  8. P. Chen, B. Lin, I. Wang, T. Hou, J. Ye, S. Vrudhula, J. Seo, Y. Cao, S. Yu, in Mitigating effects of non-ideal synaptic device characteristics for on-chip learning: 2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) (IEEE, Austin, 2015), pp. 194–199.

    Google Scholar 

  9. Z. Chen, B. Gao, Z. Zhou, P. Huang, H. Li, W. Ma, D. Zhu, L. Liu, J. Kang, H.-Y. Chen, in Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system: 2015 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2015), pp. 17.7.1–17.7.4.

    Google Scholar 

  10. Y. Lin, C. Wang, Y. Ren, Z. Wang, H. Xu, X. Zhao, J. Ma, and Y. Liu, Small Methods 3, 1900160 (2019).

    Article  Google Scholar 

  11. A. Prakash, D. Jana, and S. Maikap, Nanoscale Res. Lett. 8, 418 (2013).

    Article  ADS  Google Scholar 

  12. T. Kim, H. Kim, J. Kim, and J. J. Kim, IEEE Electron Device Lett. 38, 1228 (2017).

    Article  ADS  Google Scholar 

  13. J. Woo, and S. Yu, IEEE Nanotechnol. Mag. 12, 36 (2018).

    Article  Google Scholar 

  14. J. Zhao, Z. Zhou, Y. Zhang, J. Wang, L. Zhang, X. Li, M. Zhao, H. Wang, Y. Pei, Q. Zhao, Z. Xiao, K. Wang, C. Qin, G. Wang, H. Li, B. Ding, F. Yan, K. Wang, D. Ren, B. Liu, and X. Yan, J. Mater. Chem. C 7, 1298 (2019).

    Article  Google Scholar 

  15. W. Wang, R. Wang, T. Shi, J. Wei, R. Cao, X. Zhao, Z. Wu, X. Zhang, J. Lu, H. Xu, Q. Li, Q. Liu, and M. Liu, IEEE Electron Device Lett. 40, 1407 (2019).

    Article  ADS  Google Scholar 

  16. J. Woo, K. Moon, J. Song, S. Lee, M. Kwak, J. Park, and H. Hwang, IEEE Electron Device Lett. 37, 994 (2016).

    Article  ADS  Google Scholar 

  17. R. Wang, T. Shi, X. Zhang, W. Wang, J. Wei, J. Lu, X. Zhao, Z. Wu, R. Cao, S. Long, Q. Liu, and M. Liu, Materials 11, 2102 (2018).

    Article  ADS  Google Scholar 

  18. Q. Liu, X. M. Zhang, Q. Luo, X. L. Zhao, H. B. Lv, S. B. Long, and M. Liu, Sci. China-Phys. Mech. Astron. 61, 088711 (2018).

    Article  ADS  Google Scholar 

  19. K. Moon, M. Kwak, J. Park, D. Lee, and H. Hwang, IEEE Electron Device Lett. 38, 1023 (2017).

    Article  ADS  Google Scholar 

  20. Y. Abbas, Y. R. Jeon, A. S. Sokolov, S. Kim, B. Ku, and C. Choi, Sci. Rep. 8, 1228 (2018).

    Article  ADS  Google Scholar 

  21. B. Ku, Y. Abbas, S. Kim, A. S. Sokolov, Y. R. Jeon, and C. Choi, J. Alloys Compd. 797, 277 (2019).

    Article  Google Scholar 

  22. Q. Xia, and J. J. Yang, Nat. Mater. 18, 309 (2019).

    Article  ADS  Google Scholar 

  23. Y. J. Jeong, S. Kim, and W. D. Lu, Appl. Phys. Lett. 107, 173105 (2015).

    Article  ADS  Google Scholar 

  24. F. Miao, J. P. Strachan, J. J. Yang, M. X. Zhang, I. Goldfarb, A. C. Torrezan, P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, Adv. Mater. 23, 5633 (2011).

    Article  Google Scholar 

  25. H. Jiang, L. Han, P. Lin, Z. Wang, M. H. Jang, Q. Wu, M. Barnell, J. J. Yang, H. L. Xin, and Q. Xia, Sci. Rep. 6, 28525 (2016).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. School of Information Science and Technology, University of Science and Technology of China, Hefei, 230027, China

    YiLin Fang, JunJie An, JinSong Wei & Jian Lu

  2. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    YiLin Fang, Tuo Shi, XuMeng Zhang, ZuHeng Wu, JunJie An, JinSong Wei, Jian Lu & Qi Liu

  3. University of Chinese Academy of Sciences, Beijing, 100049, China

    Tuo Shi, XuMeng Zhang, ZuHeng Wu & Qi Liu

  4. Zhejiang Laboratory, Hangzhou, 311122, China

    Tuo Shi

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  1. YiLin Fang
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  2. Tuo Shi
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  3. XuMeng Zhang
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  4. ZuHeng Wu
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  8. Qi Liu
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Correspondence to Tuo Shi.

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Fang, Y., Shi, T., Zhang, X. et al. Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing. Sci. China Phys. Mech. Astron. 63, 297311 (2020). https://doi.org/10.1007/s11433-020-1548-1

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  • DOI: https://doi.org/10.1007/s11433-020-1548-1

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