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GaZn-VZn acceptor complex defect in Ga-doped ZnO

  • AiHua Tang
  • ZengXia Mei
  • YaoNan Hou
  • LiShu Liu
  • Vishnukanthan Venkatachalapathy
  • Alexander Azarov
  • Andrej Kuznetsov
  • XiaoLong Du
Article
  • 24 Downloads

Abstract

Gallium (Ga)-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The (GaZn-VZn) complex defect, instead of the isolated VZn2−, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements (~(0.82±0.02) eV). These findings contribute to an essential understanding of the (GaZn-VZn) complex defect and the potential engineering routes of heavily Ga-doped ZnO.

Keywords

Ga-doped ZnO complex defect self-diffusion 

Supplementary material

11433_2018_9195_MOESM1_ESM.pdf (592 kb)
Supplemental Material for GaZn-VZn acceptor complex defect in Ga-doped ZnO

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • AiHua Tang
    • 1
    • 3
  • ZengXia Mei
    • 1
  • YaoNan Hou
    • 1
  • LiShu Liu
    • 1
  • Vishnukanthan Venkatachalapathy
    • 2
  • Alexander Azarov
    • 2
  • Andrej Kuznetsov
    • 2
  • XiaoLong Du
    • 1
    • 3
  1. 1.Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of PhysicsChinese Academy of SciencesBeijingChina
  2. 2.Department of Physics, Centre for Materials Science and NanotechnologyUniversity of OsloOsloNorway
  3. 3.School of Physical SciencesUniversity of Chinese Academy of SciencesBeijingChina

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