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Room-temperature epitaxial growth of V2O3 films

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Abstract

Herein we report the room-temperature epitaxial growth of V2O3 films by laser molecule beam epitaxy. X-ray diffraction profiles show the room-temperature epitaxial V2O3 films orient in the [110] direction on α-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxidation state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are approximately 0.8 mΩ cm and 0.5 mΩ cm for 10-nm-thick and 35-nm-thick V2O3 film, respectively.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    XiangBo Liu, HuiBin Lu, Meng He, KuiJuan Jin & GuoZhen Yang

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  1. XiangBo Liu
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  2. HuiBin Lu
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  3. Meng He
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  5. GuoZhen Yang
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Correspondence to HuiBin Lu.

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Liu, X., Lu, H., He, M. et al. Room-temperature epitaxial growth of V2O3 films. Sci. China Phys. Mech. Astron. 57, 1866–1869 (2014). https://doi.org/10.1007/s11433-014-5483-4

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