Growth of Germanium Quantum Dots on Oxidized Silicon Surface

Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the parameters of their synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in which island growth by the Volmer–Weber mechanism is realized.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    R. M. H. Douhan, A. P. Kokhanenko, and K. A. Lozovoy, Russ. Phys. J., 61, No. 7, 1194–1201 (2018).

    Article  Google Scholar 

  2. 2.

    I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii, et al., Opto-Electron. Rev., 26, 195–200 (2018).

    ADS  Article  Google Scholar 

  3. 3.

    K. A. Lozovoy, A. P. Kokhanenko, and A. V. Voitsekhovskii, Nanotechnology, 29, 054002 (1–7) (2018).

    Google Scholar 

  4. 4.

    T. David, J.-N. Aqua, K. Liu, et al., Sci. Rep., 8, 2891 (1–10) (2018).

  5. 5.

    K. Liu, I. Berbezier, L. Favre, et al., Phys. Rev. Mater., 3, 023403 (1–7) (2019).

  6. 6.

    A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, et al., Phys. Solid State, 46, 77–79 (2004).

    ADS  Article  Google Scholar 

  7. 7.

    N. L. Rowell, D. J. Lockwood, A. Karmous, et al., Superlattices and Microstructures, 44, 305–314 (2008).

    ADS  Article  Google Scholar 

  8. 8.

    A. A. Shklyaev and M. Ichikava, Phys.-Usp., 51, 133–161 (2008).

  9. 9.

    K. A. Lozovoy, A. P. Kokhanenko, and A. V. Voitsekhovskii, Phys. Chem. Chem. Phys., 17, No. 44, 30052– 30056 (2015).

    Article  Google Scholar 

  10. 10.

    V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Phys. Rev. B, 68, P, 075409 (1–9) (2003).

  11. 11.

    V. G. Dubrovskii, Nucleation Theory and Growth of Nanostructures, Springer, Berlin (2014).

    Google Scholar 

  12. 12.

    X. Zhang, V. G. Dubrovskii, N. V. Sibirev, and X. Ren, Crystal Growth & Design., 11, 5441–5448 (2011).

    Article  Google Scholar 

  13. 13.

    P. Muller and R. Kern, Appl. Surf. Sci., 102, 6–11 (1996).

    ADS  Article  Google Scholar 

  14. 14.

    S. A. Kukushkin and A. V. Osipov, Phys.-Usp., 41, 983–1014 (1998).

  15. 15.

    K. A. Lozovoy, A. P. Kokhanenko, and A. V. Voitsekhovskii, Crystal Growth & Design, 15, No. 3, 1055–1059 (2015).

    Article  Google Scholar 

  16. 16.

    O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, et. al., Semiconductors, 34, 1229–1247 (2000).

  17. 17.

    A. P. Kokhanenko, K. A. Lozovoy, and A. V. Voitsekhovskii, Russ. Phys. J., 60, No. 11, 1871–1879 (2018).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding authors

Correspondence to K. A. Lozovoy or A. P. Kokhanenko or N. Yu. Akimenko or V. V. Dirko or A. V. Voitsekhovskii.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 104–109, February, 2020.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Lozovoy, K.A., Kokhanenko, A.P., Akimenko, N.Y. et al. Growth of Germanium Quantum Dots on Oxidized Silicon Surface. Russ Phys J 63, 296–302 (2020). https://doi.org/10.1007/s11182-020-02035-1

Download citation

Keywords

  • quantum dots
  • silicon
  • germanium
  • silicon oxide
  • nanoheterostructures
  • molecular beam epitaxy
  • critical thickness
  • Volmer–Weber mechanism
  • surface density
  • size distribution function