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Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions

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Russian Physics Journal Aims and scope

The results of experimental studies of processes of the radiation defect formation under ion implantation of narrow-gap CdxHg1-xTe solid solutions (MCT) are presented. The processes of formation of structural damages of the crystal and their effect on the electrophysical properties of ion-implanted bulk crystals and ptype heteroepitaxial structures grown by liquid-phase and molecular-beam epitaxy are considered. The results on the spatial distribution of implanted boron atoms and radiation donor centers in these materials are presented as a function of the mass, dose, and energy of ions being implanted and the implantation temperature. The processes and models of the formation of n+–n-–p-structures during boron ion implantation in p-type MCT and their experimental proof are considered.

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Authors and Affiliations

  1. Peter the Great Military Academy of Strategic Missile Forces, Balashikha, Russia

    N. Kh. Talipov

  2. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

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  1. N. Kh. Talipov
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  2. A. V. Voitsekhovskii
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–20, June, 2018.

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Talipov, N.K., Voitsekhovskii, A.V. Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions. Russ Phys J 61, 1005–1023 (2018). https://doi.org/10.1007/s11182-018-1490-7

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