Russian Physics Journal

, Volume 60, Issue 12, pp 2201–2208 | Cite as

A Combined Model of Charging of the Surface and Bulk of a Dielectric Target by Electrons with the Energies 10–30 keV

  • V. M. Zykov
  • D. A. Neiman

A physico-mathematical model of the processes of radiation-induced charging of dielectric materials with open surfaces, irradiated with monoenergetic electrons in the energy range 10–30 keV, is described. The model takes into account the relationship between the processes of surface and bulk charging for the given conditions of the experimental design, which accounts for the effect of anomalously long charging of dielectrics after the incident energy of primary electrons during charging is reduced to below the second critical energy for the secondary electronic emission coefficient. The initial fast phase of charging a high-resistivity dielectric material (Al2O3) is investigated. It is shown that as the incident electron energy is approaching the second critical energy during charging, the secondary electronic emission is partially suppressed due to negative charging of the open surface of the dielectric and formation of a near-surface inversion electrical field retarding the electronic emission yield.


dielectric surface charging bulk charging monoenergetic electrons secondary electronic emission 


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  1. 1.
    A. I. Akishin, and L. S. Novikov, Physical Processes on the Surfaces of Artificial Earth Satellites [in Russian], MSU Publ., Moscow (1987).Google Scholar
  2. 2.
    J. Sorensen, D. J. Rodgers, K. A. Ryden, et al., in: Proc. 5-th European Conference RADECS 99, IEEE (1999).Google Scholar
  3. 3.
    E. N. Evstaf’ieva and E. I. Rau, Moscow State University Physics Bulletin, No. 2, 34–37 (2013).Google Scholar
  4. 4.
    C. D. Thomson Measurements of the Secondary Electron Emission Properties of Dielectrics: A dissertation submitted in partial fulfillment of the requirements for the degree of doctor of philosophy, Utah, Logan (2005).Google Scholar
  5. 5.
    J. Cazaux, J. Appl. Phys., 85, No. 2, 1137–1147 (1999).ADSCrossRefGoogle Scholar
  6. 6.
    M. Touzin, D. Goeuriot, C. Guerret-Picourt, et al., J. Appl. Phys., 99, No. 11, 114110 (2006).Google Scholar
  7. 7.
    E. I. Rau, E. N. Evstaf’ieva, and M. V. Andrianov, Physics of the Solid State, 50, No. 4, 621–630 (2008).ADSCrossRefGoogle Scholar
  8. 8.
    H.-J. Fitting, H. Glaefeke, and W. Wildб Phys. Status Solidi (A), 43, No. 1, 185– 190 (1977).Google Scholar
  9. 9.
    H.-J. Fitting and M. Touzin, J. Appl. Phys., 108, No. 3, 033711 (2010).Google Scholar
  10. 10.
    P.-F. Staub, J. Phys. D: Appl. Phys., 27, No. 7, 1533–1537 (1994).ADSCrossRefGoogle Scholar
  11. 11.
    J. Cazaux, Appl. Surf. Sci., 257, No. 3, 1002–1009 (2010).ADSCrossRefGoogle Scholar
  12. 12.
    V. S. Kortov, S. V. Zvonarev, and T. V. Spiridonova, Russ. Phys. J., 54, No. 3, 288–295 (2011).CrossRefGoogle Scholar
  13. 13.
    J. F. Fowler, in: Proc. R. Soc. London. Ser. A, 236, No. 1207, 464–480 (1956).Google Scholar

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Authors and Affiliations

  1. 1.National Research Tomsk Polytechnic UniversityTomskRussia

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