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On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the ТlInТe2–ТlYbТe2 System

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The behavior of an electronic subsystem is investigated in the course of formation and development of a memory channel in solid solutions of the TlInTe2–TlYbTe2 system. An analysis of the current-voltage characteristics allows getting an insight into the reason for a sharp change in electrical conductance of the specimens under study during their transition from the high-resistance to high-conductance state and the reasons for the well known instability of threshold converters, which makes it possible to design devices with high threshold voltage stability.

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Authors and Affiliations

  1. Azerbaijan State University of Economics, Baku, Azerbaijan

    A. M. Akhmedova

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  1. A. M. Akhmedova
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Correspondence to A. M. Akhmedova.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 128–131, December, 2017.

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Akhmedova, A.M. On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the ТlInТe2–ТlYbТe2 System. Russ Phys J 60, 2193–2196 (2018). https://doi.org/10.1007/s11182-018-1345-2

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  • DOI: https://doi.org/10.1007/s11182-018-1345-2

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