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Russian Physics Journal

, Volume 56, Issue 8, pp 898–901 | Cite as

Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells

  • I. А. Prudaev
  • M. S. Skakunov
  • М. А. Lelekov
  • Yu. L. Ryaboshtan
  • P. V. Gorlachuk
  • А. А. Marmalyuk
Article

The results of experimental studies of the effect of temperature on the forward current-voltage characteristics of light-emitting diodes (LEDs) with an active region consisting of multiple (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P quantum wells are reported. It is shown that several regions can be identified in the current-voltage characteristic in the temperature range 210–390 K. Analysis shows that the first region is associated with the Sah–Noyce–Shockley recombination current and the second one – with the radiative recombination current.

Keywords

LED heterostructure current-voltage characteristics quantum efficiency 

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • I. А. Prudaev
    • 1
    • 2
    • 3
  • M. S. Skakunov
    • 1
    • 2
    • 3
  • М. А. Lelekov
    • 1
    • 2
    • 3
  • Yu. L. Ryaboshtan
    • 1
    • 2
    • 3
  • P. V. Gorlachuk
    • 1
    • 2
    • 3
  • А. А. Marmalyuk
    • 1
    • 2
    • 3
  1. 1.National Research Tomsk State UniversityTomskRussia
  2. 2.JSC “Research Institute of Semiconductor Devices”TomskRussia
  3. 3.JSC “M. F. Stelmakh Research Institute “Polyus”MoscowRussia

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