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Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells

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Russian Physics Journal Aims and scope

The results of experimental studies of the effect of temperature on the forward current-voltage characteristics of light-emitting diodes (LEDs) with an active region consisting of multiple (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P quantum wells are reported. It is shown that several regions can be identified in the current-voltage characteristic in the temperature range 210–390 K. Analysis shows that the first region is associated with the Sah–Noyce–Shockley recombination current and the second one – with the radiative recombination current.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. А. Prudaev, M. S. Skakunov, М. А. Lelekov, Yu. L. Ryaboshtan, P. V. Gorlachuk & А. А. Marmalyuk

  2. JSC “Research Institute of Semiconductor Devices”, Tomsk, Russia

    I. А. Prudaev, M. S. Skakunov, М. А. Lelekov, Yu. L. Ryaboshtan, P. V. Gorlachuk & А. А. Marmalyuk

  3. JSC “M. F. Stelmakh Research Institute “Polyus”, Moscow, Russia

    I. А. Prudaev, M. S. Skakunov, М. А. Lelekov, Yu. L. Ryaboshtan, P. V. Gorlachuk & А. А. Marmalyuk

Authors
  1. I. А. Prudaev
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  2. M. S. Skakunov
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  3. М. А. Lelekov
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  4. Yu. L. Ryaboshtan
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  5. P. V. Gorlachuk
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  6. А. А. Marmalyuk
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Corresponding author

Correspondence to I. А. Prudaev.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 44–47, August, 2013.

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Prudaev, I.А., Skakunov, M.S., Lelekov, М.А. et al. Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells. Russ Phys J 56, 898–901 (2013). https://doi.org/10.1007/s11182-013-0115-4

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  • DOI: https://doi.org/10.1007/s11182-013-0115-4

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