Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells
The results of experimental studies of the effect of temperature on the forward current-voltage characteristics of light-emitting diodes (LEDs) with an active region consisting of multiple (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P quantum wells are reported. It is shown that several regions can be identified in the current-voltage characteristic in the temperature range 210–390 K. Analysis shows that the first region is associated with the Sah–Noyce–Shockley recombination current and the second one – with the radiative recombination current.
KeywordsLED heterostructure current-voltage characteristics quantum efficiency
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