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Russian Physics Journal

, Volume 56, Issue 7, pp 760–762 | Cite as

The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells

  • I. S. Romanov
  • I. A. Prudaev
  • A. A. Marmalyuk
  • V. A. Kureshov
  • D. R. Sabitov
  • A. V. Mazalov
Article

The results of experimental studies of the internal quantum efficiency of blue LED structures with the multiple InGaN / GaN quantum wells and superlattices are discussed.

Keywords

gallium nitride internal quantum efficiency Light Emitting Diode (LED) 

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References

  1. 1.
    V. V. Lundin, et al., Pis’ma v Zh. Tekh. Fiz., 32, Vyp. 22, 88–95 (2010).Google Scholar
  2. 2.
    I. S. Romanov, Izv. Vyssh. Uchebn. Zaved. Fiz., 55, No. 8/3, 58, 59 (2012).Google Scholar
  3. 3.
    S. Watanabe, Appl. Phys. Lett., 83, 4906 (2003).ADSCrossRefGoogle Scholar
  4. 4.
    I. A. Prudaev, Izv. Vyssh. Uchebn. Zaved. Fiz., 55, No. 8/2, 89, 90 (2012).Google Scholar

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • I. S. Romanov
    • 1
  • I. A. Prudaev
    • 1
  • A. A. Marmalyuk
    • 1
  • V. A. Kureshov
    • 1
  • D. R. Sabitov
    • 1
  • A. V. Mazalov
    • 1
  1. 1.National Research Tomsk State University, Tomsk, Russia, JSC “SigmPlus”MoscowRussia

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