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Evaluation of the applicability range of the kinetic Boltzmann equation for calculating the carrier relaxation time in isotropic polycrystalline p-silicon

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

A condition of applicability of the Boltzmann equation for calculating the relaxation time of holes in isotropic polycrystalline p-type silicon is formulated for hole scattering both by a disordered system of potential barriers on the surfaces of crystallites and a disordered lattice of silicon atoms characterized by a local order. An assessment of the range of applicability of the Boltzmann equation for calculating the relaxation time of holes in isotropic polycrystalline p-silicon is made for a given scattering mechanism in the temperature T = 200–600 K and hole concentration p = (5.0 - 10.0)·1019 cm-3 ranges. The mean distance Lφ covered by a charge carrier, when it loses the phase due to inelastic phonon scattering, is estimated for an isotropic polycrystalline p-silicon.

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References

  1. V. A. Gridchin, V. M. Lyubimskii, and A. G. Moiseev, Fiz. Tekh. Poluprovodn., 39, No. 2, 208–213 (2005).

    Google Scholar 

  2. V. M. Lyubimskii, and A. G. Moiseev, Russ. Phys. J., No. 7, 778–790 (2006).

  3. A. G. Moiseev, Russ. Phys. J., No. 5, 413–424 (2007).

  4. A. G. Moiseev, Russ. Phys. J., No. 2, 195–209 (2008).

  5. V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors [in Russian], Nauka, Moscow, 1990.

    Google Scholar 

  6. A. G. Moiseev, Russ. Phys. J., No. 10, 1021–1029 (2009).

  7. A. A. Abrikosov, Fundamentals of the Theory of Metals [in Russian], Nauka, Moscow, 1987.

    Google Scholar 

  8. L. S. Levitov and A. V. Shitov, Green Functions [in Russian], Fizmatlit, Moscow, 2002.

    Google Scholar 

  9. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York, 1974.

    Google Scholar 

  10. Materials Used in Semiconductor Devices (Koping-Hoggard, ed.) [Russian translation], Mir, Moscow, 1968.

  11. Ch. Kittel, Introduction to Solid State Physics, [in Russian], Nauka, Moscow, 1978.

    Google Scholar 

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Authors and Affiliations

  1. Novosibirsk State Technical University, Novosibirsk, Russia

    A. G. Moiseev

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  1. A. G. Moiseev
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Correspondence to A. G. Moiseev.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 69–78, October, 2010.

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Moiseev, A.G. Evaluation of the applicability range of the kinetic Boltzmann equation for calculating the carrier relaxation time in isotropic polycrystalline p-silicon. Russ Phys J 53, 1060–1071 (2011). https://doi.org/10.1007/s11182-011-9531-5

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  • DOI: https://doi.org/10.1007/s11182-011-9531-5

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