Estimation of applicability of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in isotropic polycrystalline p-silicon
A condition is formulated for application of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in an isotropic silicon polycrystal, where holes are scattered both by a disordered system of potential barriers formed on crystallite surfaces and by a disordered lattice of silicon atoms characterized by local ordering. The total specific resistance of p-type isotropic polycrystalline silicon is estimated for the grain size d = 230 Å, temperature T = 300 K, and hole concentration p = (5.0 – 10.0) ⋅ 1019 cm−3. The calculated specific resistances of p-type polycrystalline silicon are compared with the experimental data.
Keywordsrelaxation time local ordering and a disordered system of potential barriers in polycrystals kinetic equation perturbation theory
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