Russian Physics Journal

, Volume 52, Issue 2, pp 163–169 | Cite as

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

  • I. A. Prudaev
  • S. S. Khludkov

The effect of base thickness (π-layer thickness d π) on the reverse current-voltage characteristic and the switching voltage U sw in a diffusion avalanche S-diode is studied. It is shown that the current-voltage characteristic shape is independent of d π, whereas the switching voltage U sw weakly decreases (to 40%) with a significant (4–5-fold) decrease in d π. It is assumed that the results obtained can be explained, taking into account electron injection from the forward-biased contact to the π-layer.


gallium arsenide S-diode current-voltage characteristic avalanche breakdown 


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© Springer Science+Business Media, Inc. 2009

Authors and Affiliations

  1. 1.Tomsk State UniversityTomskRussia
  2. 2.V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State UniversityTomskRussia

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