Analysis of the relief of the GaAs surface formed upon exposure to diffraction-modulated laser radiation
A relief of the GaAs surface irradiated by a laser through diffraction masks having different profiles is investigated. The incident beam energy density does not exceed the threshold value. Clusters of point defects are formed in the crystal surface layer upon exposure to diffraction-modulated laser radiation. With the help of theoretical calculations, it is established that clusterization in the surface layer results from redistribution of point defects in the periodic field of thermoelastic stresses.
KeywordsGaAs Atomic Force Microscopy Image Surface Relief Gallium Arsenide GaAs Surface
Unable to display preview. Download preview PDF.
- 1.S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, and G. S. Plotnikov, Fiz. Tekh. Poluprovodn., 37, No. 3, 257–264 (2003).Google Scholar
- 2.M. K. Kelly, J. Rogg, and C. E. Nebel, Phys. Status Solidi, No. 166, 651–657 (1998).Google Scholar
- 4.D. Moskal, V. Nadtochy, and M. Golodenko, Funct. Mater., 13, No. 1, 100–103 (2006).Google Scholar
- 5.V. D. Andreeva, M. I. Anisimov, N. G. Dzhumamukhambetov, and A. G. Dmitriev, Fiz. Tekh. Poluprovodn., 24, No. 6, 1010–1013 (1990).Google Scholar
- 6.V. A. Nadtochy and V. P. Alekhin, Fiz. Khim. Optich. Mater., No. 4, 27–32 (2004).Google Scholar
- 7.V. A. Batanov, F. V. Bunkin, A. M. Prokhorov, and V. B. Fedorov, Zh. Eksp. Teor. Fiz., 63, No. 4, 1240–1246 (1972).Google Scholar
- 8.M. G. Mil’vidskii and V. V. Chaldyshev, Fiz. Tekh. Poluprovodn., 32, No. 5, 513–522 (1998).Google Scholar