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Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

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Abstract

The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defects is analyzed. A comparison is made between the defect formation processes occuring during the epitaxial growth and post-growth annealing of the layers.

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Authors and Affiliations

  1. Tomsk State University, Tomsk

    L. G. Lavrentieva, I. A. Bobrovnikova & I. V. Ivonin

  2. V. D. Kuznetsov Siberian Physical Technical Institute, Russia

    M. D. Vilisova

  3. Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Russia

    V. V. Preobrazhenskii

  4. A. F. Ioffe Physical Technical Institute, Russia

    V. V. Chaldyshev

Authors
  1. L. G. Lavrentieva
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  2. M. D. Vilisova
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  3. I. A. Bobrovnikova
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  4. I. V. Ivonin
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  5. V. V. Preobrazhenskii
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  6. V. V. Chaldyshev
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__________

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 63–72, December, 2006.

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Lavrentieva, L.G., Vilisova, M.D., Bobrovnikova, I.A. et al. Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy. Russ Phys J 49, 1334–1343 (2006). https://doi.org/10.1007/s11182-006-0263-x

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  • DOI: https://doi.org/10.1007/s11182-006-0263-x

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