Abstract
This work is aimed at studying the electrophysical and recombination properties of slowly and rapidly cooled n-and p-type silicon doped by nickel during thermal treatment. It is shown that the changes in the lifetime in slowly and rapidly cooled n-Si<P, Ni> under isochronous thermal treatment depend on the “nickel + trace impurity” complexes. An increase in the lifetime observed in p-Si<B, Ni> as compared with the reference silicon is caused by the presence of a carrier-capture level.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 57–61, February, 2006.
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Karimov, M., Kurbanov, A.O., Zainabidinov, S. et al. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon. Russ Phys J 49, 183–187 (2006). https://doi.org/10.1007/s11182-006-0085-x
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DOI: https://doi.org/10.1007/s11182-006-0085-x