Russian Physics Journal

, Volume 49, Issue 2, pp 183–187 | Cite as

The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

  • M. Karimov
  • A. O. Kurbanov
  • S. Zainabidinov
  • A. K. Karakhodzhaev


This work is aimed at studying the electrophysical and recombination properties of slowly and rapidly cooled n-and p-type silicon doped by nickel during thermal treatment. It is shown that the changes in the lifetime in slowly and rapidly cooled n-Si<P, Ni> under isochronous thermal treatment depend on the “nickel + trace impurity” complexes. An increase in the lifetime observed in p-Si<B, Ni> as compared with the reference silicon is caused by the presence of a carrier-capture level.


Electron Spin Resonance Dope Sample Deep Level Transient Spectroscopy Nickel Atom Trace Impurity 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    S. M. Ryvkin, Photoelectric Phenomena in Semiconductors [in Russian], Fizmatgiz, Moscow, (1963).Google Scholar
  2. 2.
    A. G. Milnes, Deep Impurities in Semiconductors, Wiley, New York, 1973.Google Scholar
  3. 3.
    F. A. Zaitov, Yu. M. Dobrovinskii, V. B. Neimash et al., Fiz. Tekh. Poluprovodn., 21, 2082 (1987).Google Scholar
  4. 4.
    Z. V. Basheleishvili, V. S. Garinyk, S. I. Gorin, and T. A. Pagava, Fiz. Tekh. Poluprovodn., 18, 1714 (1984).Google Scholar
  5. 5.
    V. B. Neimash, M. G. Sosnin, V. I. Shakhovtsov, et al., Fiz. Tekh. Poluprovodn., 22, No. 2, 206 (1988).Google Scholar
  6. 6.
    R. F. Vitman, N. B. Guseva, A. A. Lebedev, and E. S. Taptygov, Fiz. Tekh. Poluprovodn., 23, No. 5, 919 (1989).Google Scholar
  7. 7.
    F. M. Talipov, Fiz. Tekh. Poluprovodn., 31, 515 (1997).Google Scholar
  8. 8.
    K. D. Glinchuk, N. M. Litovchenko, and R. Merker, Poluprovodn. Tekh. Electron., Vyp. 25, 17 (1977).Google Scholar
  9. 9.
    K. D. Glinchuk, N. M. Litovchenko, Z. A. Salnik, and A. L. Troshin, Fiz. Tekh. Poluprovodn., 19, 770 (1985).Google Scholar
  10. 10.
    F. M. Talipov and M. K. Bakhadyrkhanov, Elektron. Tekh., 6 (Materialy), 5(204), 49 (1985).Google Scholar
  11. 11.
    M. K. Sheinkman and A. Ya. Shik, Fiz. Tekh. Poluprovodn., 10, No. 2, 209 (1976).Google Scholar
  12. 12.
    S. M. Ryvkin, Fiz. Tekh. Poluprovodn., 11, No. 12, 2378 (1977).Google Scholar
  13. 13.
    M. Karimov and A. K. Karakhodzhaev, Russ. Phys. J., No. 7, 734 (2001).Google Scholar
  14. 14.
    A. A. Istratov and E. R. Weber, Appl. Phys. A, No. 66, 123 (1998).Google Scholar
  15. 15.
    M. Bakhadyrkhanov, S. Zainabidinov, and A. Khamidov, Fiz. Tekh. Poluprovodn., 14, 412 (1980).Google Scholar
  16. 16.
    S. K. Ghandhi and F. L. Thiel, Proc. IEEE, No. 57, 1484 (1969).Google Scholar
  17. 17.
    M. Karimov, A. O. Kurbanov, and Sh. A. Makhmudov, Proc. Conf. 60 Anniv. of Acad. of Sci. of Rep. Uzbekistan and Phys.-Tech. Ins. “Fundamental and Applied Physics”, Tashkent, 2003.Google Scholar
  18. 18.
    M. D. Khodzhaev, Absract of Cand. Phys.-Math. Sci. Thesis, Tashkent, 1991.Google Scholar
  19. 19.
    C. S. Zainabidinov and Kh. S. Daliev, Defect Formation in Silicon [in Russian], Universitet, Tashkent, 1993.Google Scholar
  20. 20.
    C. S. Zainabidinov, Basic Physics of Deep Level Formation in Silicon [in Russian], Fan, Tashkent, 1984.Google Scholar
  21. 21.
    V. I. Fistul’, Introduction into Semiconductor Physics [in Russian], Vyssh. Shkola, Moscow, 1984.Google Scholar
  22. 22.
    D. V. Lang, J. Appl. Phys., 45, No. 7, 3023 (1974).CrossRefADSGoogle Scholar
  23. 23.
    H. H. Woodbury and G. W. Ludwig, Electron Spin Resonance in Semiconductors, Academic Press, New York, 1962.Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2006

Authors and Affiliations

  • M. Karimov
    • 1
  • A. O. Kurbanov
    • 2
  • S. Zainabidinov
    • 2
  • A. K. Karakhodzhaev
    • 3
  1. 1.Institute of Nuclear Physics of the Academy of Sciences of Republic UzbekistanUzbekistan
  2. 2.Z. M. Babura Andizhan State UniversityUzbekistan
  3. 3.M. Ulugbek Uzbek National UniversityUzbekistan

Personalised recommendations