Russian Physics Journal

, Volume 48, Issue 10, pp 1095–1100 | Cite as

Change in the structural state of III–V semiconductor compounds under mechanical stresses

  • V. N. Davydov
  • S. V. Belyaev
  • A. L. Kokhlov


The metallographic method is used to investigate the structural state of subsurface indium antimonide and arsenide layers under local static elastic stress of varying magnitude and exposure time. It is demonstrated that at low stresses, the concentration of etch figures on the semiconductor surface decreases in the vicinity of the region of stress application, which provides cleaning of a large area from structural defects. At high elastic stresses, the concentration of etch figures increases in the region of stress application. We believe that the examined changes are caused by two opposite mechanisms, namely, a decrease in the defect concentration due to their migration from the region of stress application and an increase in the defect concentration due to their generation in the elastic stress field.


Stress Field Stress Application Structural State Elastic Stress Arsenide 
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Copyright information

© Springer Science+Business Media, Inc. 2005

Authors and Affiliations

  • V. N. Davydov
    • 1
  • S. V. Belyaev
    • 1
  • A. L. Kokhlov
    • 1
  1. 1.Tomsk State University of Control Systems and Radio ElectronicsRussia

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