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The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS Structures

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Abstract

The dependence of active and reactive components of the admittance of MIS structures based on heteroepitaxial Hg0.78Cd0.22Te produced by molecular-beam epitaxy as a function of bias voltage is experimentally studied in the frequency range 1 kHz − 1 MHz. The resistance of the epitaxial-film volume is shown to significantly affect the measured admittance in the case where the electron concentration in HgCdTe is up to 5·1014 cm− 3, and this is manifested in a number of features of the capacity-voltage characteristics. The resistance of the epitaxial-film volume is found for the samples with different initial conductivity and for the samples with graded-band subsurface layers. The techniques are proposed that make it possible to avoid the influence of volume resistance on the admittance of MIS structures on the basis of heteroepitaxial HgCdTe.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadukh

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  1. A. V. Voitsekhovskii
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  2. S. N. Nesmelov
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  3. S. M. Dzyadukh
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 31–37, June, 2005.

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Voitsekhovskii, A.V., Nesmelov, S.N. & Dzyadukh, S.M. The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS Structures. Russ Phys J 48, 584–591 (2005). https://doi.org/10.1007/s11182-005-0174-2

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  • DOI: https://doi.org/10.1007/s11182-005-0174-2

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