Russian Physics Journal

, Volume 48, Issue 6, pp 581–583 | Cite as

Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics

  • E. A. Senokosov
  • A. L. Makarevich
  • V. V. Sorochan


A switching of the S-type in the 20–200 µm thick polycrystalline n-CdTe:In layers with resistance of 103–106 Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers.


Threshold Parameter Control Electric Switch Switching Threshold Breakdown Mechanism Electric Instability 


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Copyright information

© Springer Science+Business Media, Inc. 2005

Authors and Affiliations

  • E. A. Senokosov
    • 1
  • A. L. Makarevich
    • 1
  • V. V. Sorochan
    • 1
  1. 1.Pridnestrovsk State UniversityRussia

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