Russian Microelectronics

, Volume 34, Issue 6, pp 386–396 | Cite as

Device and process simulation of SOS and SOI MOSFETs

  • T. Yu. Kroupkina
Modeling and Simulation


The 3D modeling of thin-film structures used in SOS and SOI MOSFETs with different geometries is discussed. For such devices a computer simulation of electrical performance is run with the ISE TCAD simulator. A comparison with experimental results is made. Ways to increase the accuracy of the underlying model are considered.


Process Simulation RUSSIAN Microelectronics Gate Region Electron Current Density Body Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© MAIK "Nauka/Interperiodica" 2005

Authors and Affiliations

  • T. Yu. Kroupkina
    • 1
  1. 1.Moscow Institute of Electronic Engineering (Technical University)MoscowRussia

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