Device and process simulation of SOS and SOI MOSFETs
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The 3D modeling of thin-film structures used in SOS and SOI MOSFETs with different geometries is discussed. For such devices a computer simulation of electrical performance is run with the ISE TCAD simulator. A comparison with experimental results is made. Ways to increase the accuracy of the underlying model are considered.
KeywordsProcess Simulation RUSSIAN Microelectronics Gate Region Electron Current Density Body Bias
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