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Russian Microelectronics

, Volume 34, Issue 4, pp 252–258 | Cite as

Stresses near the Edges of a Square Silicon Membrane

  • V. A. Gridchin
  • V. V. Grichenko
  • V. M. Lubimsky
  • A. V. Shaporin
Microelectromechanical Systems

Abstract

The finite-element method (FEM) is used to calculate stresses in a square silicon pressure-sensing element. The stresses near the edges of the membrane are calculated and measured. Close agreement is achieved between the FEM predictions and experimental results. An empirical formula is constructed for the longitudinal component of stress at points outside the membrane. It is established that the normal component of stress should be considered when designing pressure sensors for use at applied pressures above 107 Pa.

Keywords

Silicon Close Agreement Pressure Sensor Empirical Formula Normal Component 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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REFERENCES

  1. 1.
    Gridchin, V.A., Lubimsky, V.M., and Shaporin, A.V., Nonlinear Response of a Rectangular Membrane Sensing Element, Mikroelektronika, 2003, vol. 32, no.4, pp. 294–304.Google Scholar
  2. 2.
    Chouaf, A., Malhaire, C., Le Berre, M., Dupeux, M., Pourroy, F., and Barbier, D., Stress Analysis at Singular Points of Micromachined Silicon Membranes, Sens. Actuators, 2000, vol. 84, pp. 109–115.Google Scholar
  3. 3.
    Gridchin, V.A., Grichenko, V.V., Lubimsky, V.M., and Shaporin, A.V., Stresses in Square Shaped Silicon Membranes, in Trudy IV mezhdunarodnoi konferentsii “Aktual’nye problemy elektronnogo priborostroeniya” APEP-98 (Proc. 4th Int. Conf. on Current Issues of Electronic Instrumentation, APEP-98), Novosibirsk, 1998, vol. 4, pp. 32–36.Google Scholar
  4. 4.
    Lubimsky, V.M., Ivanov, V.A., and Shaporin, A.V., Edge Stresses in the Membrane of a Pressure Sensor, in Trudy V mezhdunarodnoi konferentsii “Aktual’nye problemy elektronnogo priborostroeniya” APEP-2000 (Proc. 5th Int. Conf. on Current Issues of Electronic Instrumentation, APEP-2000), Novosibirsk, 2000, vol. 7, pp. 71–79.Google Scholar
  5. 5.
    Gridchin, V.A., Grichenko, V.V., Lubimsky, V.M., Shaporin, A.V., and Lee, J.H., Design Features for High Pressure TransducersGoogle Scholar
  6. 6.
    Gridchin, V.A., Grichenko, V.V., Lubimsky, V.M., Square-Membrane Deflection and Stress: Identifying the Validity Range of a Calculation Procedure, Mikroelektronika, 2005, vol. 34, no.3, pp.Google Scholar
  7. 7.
    Gridchin, V.A. and Lubimsky, V.M., Phenomenological Model of the Piezoresistive Effect in Polysilicon Films, Mikroelektronika, 2003, vol. 32, no.4, pp. 261–270.Google Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2005

Authors and Affiliations

  • V. A. Gridchin
    • 1
  • V. V. Grichenko
    • 1
  • V. M. Lubimsky
    • 1
  • A. V. Shaporin
    • 1
  1. 1.Novosibirsk State Technical UniversityNovosibirskRussia

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