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n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

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Abstract

Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses. Conditions are identified under which electron mobility can be enhanced by introduction of an ultrathin barrier into a single quantum well. The findings are analyzed from the viewpoint of interface structural quality.

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Authors and Affiliations

  1. Institute of UNF Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia

    I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, V. G. Mokerov & V. V. Saraikin

  2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    G. V. Ganin, R. M. Imamov & A. A. Lomov

  3. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

    M. A. Chuev

Authors
  1. I. S. Vasil’evskii
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  2. G. B. Galiev
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  3. G. V. Ganin
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  4. R. M. Imamov
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  5. E. A. Klimov
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  6. A. A. Lomov
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  7. V. G. Mokerov
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  8. V. V. Saraikin
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  9. M. A. Chuev
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Additional information

Translated from Mikroelektronika, Vol. 34, No. 2, 2005, pp. 98–109.

Original Russian Text Copyright © 2005 by Vasil’evskii, Galiev, Ganin, Imamov, Klimov, Lomov, Mokerov, Saraikin, Chuev.

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Vasil’evskii, I.S., Galiev, G.B., Ganin, G.V. et al. n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties. Russ Microelectron 34, 78–87 (2005). https://doi.org/10.1007/s11180-005-0010-y

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  • DOI: https://doi.org/10.1007/s11180-005-0010-y

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