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Russian Microelectronics

, Volume 34, Issue 2, pp 78–87 | Cite as

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

  • I. S. Vasil’evskii
  • G. B. Galiev
  • G. V. Ganin
  • R. M. Imamov
  • E. A. Klimov
  • A. A. Lomov
  • V. G. Mokerov
  • V. V. Saraikin
  • M. A. Chuev
Process Technologies
  • 63 Downloads

Abstract

Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses. Conditions are identified under which electron mobility can be enhanced by introduction of an ultrathin barrier into a single quantum well. The findings are analyzed from the viewpoint of interface structural quality.

Keywords

Transport Property Doping Level Electron Mobility Structural Quality Single Quantum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK “Nauka/Interperiodica” 2005

Authors and Affiliations

  • I. S. Vasil’evskii
    • 1
  • G. B. Galiev
    • 1
  • G. V. Ganin
    • 2
  • R. M. Imamov
    • 2
  • E. A. Klimov
    • 1
  • A. A. Lomov
    • 2
  • V. G. Mokerov
    • 1
  • V. V. Saraikin
    • 1
  • M. A. Chuev
    • 3
  1. 1.Institute of UNF Semiconductor ElectronicsRussian Academy of SciencesMoscowRussia
  2. 2.Shubnikov Institute of CrystallographyRussian Academy of SciencesMoscowRussia
  3. 3.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia

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