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Russian Chemical Bulletin

, Volume 56, Issue 5, pp 890–894 | Cite as

Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types

  • G. F. Novikov
  • N. A. Radychev
Article

Abstract

A correlation between the recombination rate constant of free electrons and holes (k r) and the band gap (E g) of semiconductors (AgCl, AgBr, CdxZn1−x S, CdSe, CdTe, and their solid solutions) at 295 K was found. The experimental data were obtained by the UHF photoconductivity (36 GHz) using current carrier generation by laser pulses (λ = 337 nm, pulse duration 8 ns). A decrease in E g in a range of 1.5–3 eV increases k r by 1.5 orders of magnitude according to the law close to exponential.

Key words

recombination electron hole rate constant band gap 

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Copyright information

© Springer Science+Business Media, Inc. 2007

Authors and Affiliations

  1. 1.Institute of Problems of Chemical PhysicsRussian Academy of SciencesChernogolovka, Moscow RegionRussian Federation

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