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Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types

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Abstract

A correlation between the recombination rate constant of free electrons and holes (k r) and the band gap (E g) of semiconductors (AgCl, AgBr, CdxZn1−x S, CdSe, CdTe, and their solid solutions) at 295 K was found. The experimental data were obtained by the UHF photoconductivity (36 GHz) using current carrier generation by laser pulses (λ = 337 nm, pulse duration 8 ns). A decrease in E g in a range of 1.5–3 eV increases k r by 1.5 orders of magnitude according to the law close to exponential.

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References

  1. V. L. Bonch-Bruevich and S. G. Kalashnikov, Fizika Poluprovodnikov [Physics of Semiconductors], Nauka, Moscow, 1977, 672 (in Russian).

    Google Scholar 

  2. G. F. Novikov and B. I. Golovanov, J. Imaging Sci., 1995, 39, 520.

    CAS  Google Scholar 

  3. G. F. Novikov, B. I. Golovanov, and N. A. Tikhonina, Izv. Akad. Nauk, Ser. Khim., 1996, 2234 [Russ. Chem. Bull., 1996, 45, 2118 (Engl. Transl.)].

    Google Scholar 

  4. A. V. Tataurov, Yu. V. Meteleva, N. L. Sermakasheva, and G. F. Novikov, Izv. Akad. Nauk, Ser. Khim., 2003, 1137 [Russ. Chem. Bull., Int. Ed., 2003, 52, 1201 (Engl. Transl.)].

    Google Scholar 

  5. M. V. Gapanovich, N. A. Radychev, E. V. Rabenok, D. N. Voilov, I. N. Odin, and G. F. Novikov, Khim. Vys. Energii, 2007, 41, 159 [High Energy Chem., 2007, 41, No. 2 (Engl. Transl.)].

    Google Scholar 

  6. N. A. Radychev and G. F. Novikov, Izv. Akad. Nauk, Ser. Khim., 2006, 740 [Russ. Chem. Bull., 2006, 55, 766 (Engl. Transl.)].

  7. Yu. V. Meteleva and G. F. Novikov, Fiz. Tekhn. Poluprovodnikov, 2006, 40, 1167 [Semiconductors, 2006, 40 (Engl. Transl.)].

    Google Scholar 

  8. V. N. Semenov and A. V. Naumov, Vestn. VGU, Ser. Khim., Biol. [Bulletin of Volgograd State Univ., Ser. Chem., Biol.], 2000, No. 2, 50 (in Russian).

  9. G. F. Novikov, B. I. Golovanov, and M. V. Alfimov, Khim. Vys. Energii, 1995, 29, 429 [High Energy Chem., 1995, 29 (Engl. Transl.)].

    Google Scholar 

  10. N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul’ga, and V. N. Semenov, Fiz. Tekhn. Poluprovodnikov, 2004, 38, 395 [Semiconductors, 2004, 38, 380 (Engl. Transl.)].

    Google Scholar 

  11. V. S. Vavilov, Usp. Fiz. Nauk, 1994, 164, 287 [Russ. Phys. Rev., 1994, 164 (Engl. Transl.)].

    Article  CAS  Google Scholar 

  12. B. I. Golovanov and G. F. Novikov, Sci. Appl. Photo, 1998, 40, 21; V. I. Saunders, R. W. Tyler, and W. West, J. Chem. Phys., 1962, 37, 1126.

    Google Scholar 

  13. G. F. Novikov, E. V. Rabenok, and M. V. Alfimov, Khim. Vys. Energii, 2005, 39, 1 [High Energy Chem., 2005, 39, 167 (Engl. Transl.)].

    Google Scholar 

  14. Yu. V. Meteleva, Ph. D. (Chem.) Thesis, Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, 2002, 164 pp. (in Russian).

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, 1 prosp. Akad. Semenova, 142432, Chernogolovka, Moscow Region, Russian Federation

    G. F. Novikov & N. A. Radychev

Authors
  1. G. F. Novikov
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  2. N. A. Radychev
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Correspondence to N. A. Radychev.

Additional information

Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 856–860, May, 2007.

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Novikov, G.F., Radychev, N.A. Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types. Russ Chem Bull 56, 890–894 (2007). https://doi.org/10.1007/s11172-007-0134-9

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  • DOI: https://doi.org/10.1007/s11172-007-0134-9

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