Radiophysics and Quantum Electronics

, Volume 51, Issue 2, pp 134–144 | Cite as

Manifestation of 1/f leakage noise in nanoscale light-emitting structures



We present the results of studies of the 1/f noise spectrum in light-emitting diodes and lasers with nanoscale structures based on GaAs and its solid solutions. Leakage current was detected from an analysis of I–V characteristics and voltage noise spectrum dependences on the current. Leakage current appeared to be the main source of noise in the samples and leads to intensity fluctuations of the spontaneous radiation.


Leakage Current Optical Radiation Noise Spectrum Coherence Function Diode Current 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    M. Ohtsu and S. Kotajima, Jap. J. Appl. Phys., 23, 760 (1984).CrossRefADSGoogle Scholar
  2. 2.
    J. J. Brophy, J. Appl. Phys., 38, 2465 (1967).CrossRefADSGoogle Scholar
  3. 3.
    A. Dandridge and H. F. Taylor, IEEE J. Quantum Electron., 18, No. 10, 1738 (1982).CrossRefADSGoogle Scholar
  4. 4.
    G. Tenchio, Electr. Lett., 12, No. 21, 562 (1976).CrossRefADSGoogle Scholar
  5. 5.
    L. K. J. Vandamme and J. R. de Boer, Noise in Physical Systems and 1/f Noise — 1985, Elsevier Science Publishers BV (1986), p. 381.Google Scholar
  6. 6.
    R. J. Fronen and L. K. J. Vandamme, in: Proc. of the Ninth Int. Conf. Noise in Physical Systems, Montreal, May 25–29, 1987, World Scientific, Singapore (1987), p. 187.Google Scholar
  7. 7.
    R. J. Fronen and L. K. J. Vandamme, IEEE J. Quantum Electron., 24, No. 5, 724 (1988).CrossRefADSGoogle Scholar
  8. 8.
    R. Schimpe, Z. Phys. B: Condensed Matter, 52, 289 (1983).CrossRefADSGoogle Scholar
  9. 9.
    S.-L. Jang and J.-Y. Wu, Solid-State Electron., 36, 189 (1993).CrossRefADSGoogle Scholar
  10. 10.
    S.-L. Jang, K.-Y. Chang, and J.-K. Hsu, Solid-State Electron., 38, 1449 (1995).CrossRefADSGoogle Scholar
  11. 11.
    A. A. Andronov, A. V. Belyakov, V. A. Gur’yev, and A. V. Yakimov, in: Proc. of the 2nd Working Meeting on the NATO project SfP-973799 “Semiconductors,” TALAM, Nizhny Novgorod (2002), p. 38.Google Scholar
  12. 12.
    R. P. Nanavati, An Introduction to Semiconductor Electronics, McGraw-Hill (1963).Google Scholar
  13. 13.
    V. B. Orlov and A. V. Yakimov, Physica B, 162, 13 (1990).CrossRefADSGoogle Scholar
  14. 14.
    Sh. M. Kogan and K. É. Nagayev, Pis’ma Zh. Tekh. Fiz., 10, No. 5, 313 (1984).Google Scholar
  15. 15.
    V. B. Orlov and A. V. Yakimov, Radiophys. Quantum Electron., 27, No. 12, 1105 (1984).CrossRefADSGoogle Scholar
  16. 16.
    Noise in Electronic Devices [Russian translation], Énergiya, Moscow, Leningrad (1964).Google Scholar
  17. 17.
    A. N. Malakhov, Radiotekh. Electron., 3, No. 4, 547 (1958).Google Scholar
  18. 18.
    T. G. M. Kleinpenning, Physica 98B+C, North-Holland Publishing Company (1980), p. 289.Google Scholar
  19. 19.
    A. K. Naryshkin, in: Reports of Sci.-Tech. Conf. of the Moscow Energy Institute. Radiotechnical Section, Receiver-Amplifier Technique Subsection [in Russian], Moscow Energy Institute, Moscow (1967), p. 65.Google Scholar
  20. 20.
    E. L. Wall, Solid-State Electron., 19, No. 5, 389 (1976).CrossRefADSGoogle Scholar
  21. 21.
    A. G. Golovko, Radiophys. Quantum Electron., 21, No. 10, 1065 (1978).CrossRefADSGoogle Scholar
  22. 22.
    A. É. Klimov, I. G. Neizvestny, and V. N. Shumskoy, Fiz. Tekh. Poluprovodn., 17, No. 10, 1766 (1983).Google Scholar
  23. 23.
    A. V. Yakimov, Izv. Vyssh. Uchebn. Zaved., Radiofiz, 27, No. 1, 120 (1984).MathSciNetGoogle Scholar

Copyright information

© Springer Science+Business Media, Inc. 2008

Authors and Affiliations

  • A. V. Belyakov
    • 1
  • A. V. Klyuev
    • 1
  • A. V. Yakimov
    • 1
  1. 1.N. I. Lobachevsky State University of Nizhny NovgorodNizhny NovgorodRussia

Personalised recommendations