Abstract
We study, both numerically and experimentally, a microwave commutator (phase shifter), whose active element comprises a metal plane mirror with a semiconductor plate on it. Phase shifting of the reflected microwave beam is attained by creating a conducting layer in the semiconductor by a laser with quantum energy approximately equal to the forbidden band width. Using a disk of high-purity silicon and a titatnium-sapphire pulsed laser, we study experimentally a 180° phase shifter operated with a Gaussian wave beam at a frequency of 30 GHz. Efficient phase shifting of the wave beam over a time of several nanoseconds is shown at a low power level.
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References
Z. D. Farkas, H. A. Hogg, G. A. Loew, and P. B. Wilson, in: Proc. 9th Int. Conf. on High Energy Accelerator, Stanford, California (1974), p. 576.
S. G. Tantawi, V. A. Dolgashev, and C. D. Nantista, in: Proc. of LINAC2004, Lübeck, Germany (2004), p. 852.
I. Syratchev, G. Denisov, Vl. Kocharovsky, et al., “Optically controlled 30 GHz high power active RF phase switch for the CTF3 RF pulse compressor,” CLIC-Note-645, Geneva, Switzerland, CERN OPEN-2005-026.
A. A. Vikharev, G. G. Denisov, Vl. V. Kocharovsky, et al., Pis’ma Zh. Tekhn. Fiz. (2007) [in press].
W. Nunnally and D. Cooperstock, in: Proc. 25th Int. Power Modulator Symposium 2002 and 2002 High-Voltage Workshop, 2002, p. 183.
A. N. Stepanov, A. A. Babin, A. M. Kiselev, and A. M. Sergeev, Kvant. Élektron., 31, No. 7, 623 (2001).
B. A. Andreev, V. V. Parshin, V. B. Shmagin, et al., Neorg. Mater., 33, No. 11, 1 (1997).
S. M. Zi, Physics of Semiconductor Devices [in Russian], Mir, Moscow (1984), Vols. 1 and 2.
F. Tamura and S. G. Tantawi, in: Physical Review Special Topic. Accelerators and Beams 5, 062001 (2002).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 50, Nos. 10–11, pp. 866–874, October–November 2007.
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Vikharev, A.A., Denisov, G.G., Kocharovsky, V.V. et al. Fast quasi-optical phase shifter based on the effect of induced photo conductivity in silicon. Radiophys Quantum El 50, 786–793 (2007). https://doi.org/10.1007/s11141-007-0069-x
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DOI: https://doi.org/10.1007/s11141-007-0069-x