Powder Metallurgy and Metal Ceramics

, Volume 53, Issue 5–6, pp 294–302 | Cite as

The Relative Density and Electrical Properties of AlN with Additives Depending on the Composition of the Mixture and the Temperature of hot Pressing

  • I. V. Brodnikovska
  • A. I. Derii
  • V. Y. Petrovskii

The paper examines the effect of additions (TiO2, TiH2, TiN, and TiC up to 4 vol.%) and isothermal holding temperature on the dielectric properties of hot-pressed AlN ceramics in a wide frequency range. It is established that the service characteristics of AlN–TiO2 ceramics show a parabolic dependence on titanium oxide additions: optimal porosity (0.1%), permittivity (9.7), and dielectric loss tangent (1.3 ⋅10−3) are reached with 0.5 to 2 vol.%. TiO2. Additions of TiH2 promote the formation of metallic films, mainly oriented along the pressing direction. The deviation of sintering temperature from the optimal value increases conduction-induced losses since structures with more defects and conducting phases form. It is shown that broadband (103–107 Hz) dielectric spectroscopy can be used to monitor the composite’s microstructure: the frequency of migration polarization dispersion provided information on the effective thickness of the conducting channel and the slope σ(ω) allowed the lattice and jump responses to be differentiated.


aluminum nitride hot pressing nondestructive examination defects dielectric response polarization 


  1. 1.
    V. I. Kostenko, V. S. Seryogin, L. A. Gorshakova, and A. I. Vassilevich, “Highly thermally conductive aluminum nitride ceramics in space instrumentation: Application prospects,” in: Modern Information and Design Technologies [in Russian], Moscow (2003), pp. 250–256.Google Scholar
  2. 2.
    L. Islamgazina, Jurgen Shultz-Harder, and S. Valev, “Criteria for the choice of substrates for power modules,” Comp. Techn., No. 38, 60–63 (2004).Google Scholar
  3. 3.
    Electronic Register. Path to link: http://www.goodfellow.com/pdf/ 442_1111010.pdf.
  4. 4.
    Y. G. Tkachenko, D. Z. Yurchenko, G. S. Oleynik, et al., “Self-reinforced materials based on aluminum nitride,” Powder Metall. Met. Ceram., No. 9, 69–74 (1992).Google Scholar
  5. 5.
    S. Kume, M. Yasuoka, N. Omura, and K. Watari, “Effect of additives on dielectric loss of AlN ceramics,” Key Eng. Mater., 317–318, 845–848 (2006).CrossRefGoogle Scholar
  6. 6.
    S.-A. Jang and G. M. Choi, “Effect of dopants on the complex impedance and dielectric properties of aluminum nitride,” J. Am. Ceram. Soc., 75, No. 11, 3145–3148 (1992).CrossRefGoogle Scholar
  7. 7.
    M. R. Freedman, J. D. Kiser, and T. P. Herbell, “Factors influencing the ball milling of Si3N4 in water,” Ceram. Eng. Sci. Proc., 6, No. 7/8, 1124–1134 (1985).CrossRefGoogle Scholar
  8. 8.
    I. V. Brodnikovskaya, Y. V. Vorona, and V. Y. Petrovskii, “Producing high-temperature dielectrics and SiN-based heat-spreading substrates,” Keramika: Nauka i Zhizn, No. 3 (17), 14–29 (2012).Google Scholar
  9. 9.
    Y. G. Tkachenko, R. A. Morozova, and D. Z. Yurchenko, “Effects of chemicothermal treatment of aluminum nitride powders on the structure and propertiex of the resulting hot-pressed ceramic,” Powder Metall. Met. Ceram., 34, No. 1/2, 69–73 (1995).CrossRefGoogle Scholar
  10. 10.
    D. M. Kazarnovskii and B. M. Tareyev, Test of Insulation Materials [in Russian], Energiya, Leningrad (1969), p. 296.Google Scholar
  11. 11.
    I. V. Brodnikovska, A. I. Derii, and V. Y. Petrovskii, “Broadband response of AlN ceramic composites,” Proc. Appl. Ceram., 8, No. 1, 47–51 (2014).CrossRefGoogle Scholar
  12. 12.
    K. K. Srivastava, M. Zulfequar, and A. Kumar, “Dielectric behavior of hot-pressed AlN ceramic exposed to inorganic acid vapors,” J. Mater. Sci., 25, No. 6, 2861–2865 (1990).CrossRefGoogle Scholar
  13. 13.
    P. Boch, J. C. Glandus, J. Jarrige, et al., “Sintering, oxidation and mechanical properties of hot-pressed aluminum nitride,” Ceram. Intern., 8, No. 1, 34–40 (1982).CrossRefGoogle Scholar
  14. 14.
    E. M. Trukhan, “Permittivity dispersion of heterogeneous systems,” Fizika Tverd. Tela, 4, No. 12, 3496–3511 (1962).Google Scholar
  15. 15.
    A. K. Joscher, “The “universal” dielectric response,” Nature, 267, 673–679 (1977).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • I. V. Brodnikovska
    • 1
  • A. I. Derii
    • 1
  • V. Y. Petrovskii
    • 1
  1. 1.Frantsevich Institute for Problems of Materials ScienceNational Academy of Sciences of UkraineKievUkraine

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