Powder Metallurgy and Metal Ceramics

, Volume 53, Issue 5–6, pp 294–302 | Cite as

The Relative Density and Electrical Properties of AlN with Additives Depending on the Composition of the Mixture and the Temperature of hot Pressing

  • I. V. Brodnikovska
  • A. I. Derii
  • V. Y. Petrovskii

The paper examines the effect of additions (TiO2, TiH2, TiN, and TiC up to 4 vol.%) and isothermal holding temperature on the dielectric properties of hot-pressed AlN ceramics in a wide frequency range. It is established that the service characteristics of AlN–TiO2 ceramics show a parabolic dependence on titanium oxide additions: optimal porosity (0.1%), permittivity (9.7), and dielectric loss tangent (1.3 ⋅10−3) are reached with 0.5 to 2 vol.%. TiO2. Additions of TiH2 promote the formation of metallic films, mainly oriented along the pressing direction. The deviation of sintering temperature from the optimal value increases conduction-induced losses since structures with more defects and conducting phases form. It is shown that broadband (103–107 Hz) dielectric spectroscopy can be used to monitor the composite’s microstructure: the frequency of migration polarization dispersion provided information on the effective thickness of the conducting channel and the slope σ(ω) allowed the lattice and jump responses to be differentiated.


aluminum nitride hot pressing nondestructive examination defects dielectric response polarization 


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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • I. V. Brodnikovska
    • 1
  • A. I. Derii
    • 1
  • V. Y. Petrovskii
    • 1
  1. 1.Frantsevich Institute for Problems of Materials ScienceNational Academy of Sciences of UkraineKievUkraine

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