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The Relative Density and Electrical Properties of AlN with Additives Depending on the Composition of the Mixture and the Temperature of hot Pressing

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Powder Metallurgy and Metal Ceramics Aims and scope

The paper examines the effect of additions (TiO2, TiH2, TiN, and TiC up to 4 vol.%) and isothermal holding temperature on the dielectric properties of hot-pressed AlN ceramics in a wide frequency range. It is established that the service characteristics of AlN–TiO2 ceramics show a parabolic dependence on titanium oxide additions: optimal porosity (0.1%), permittivity (9.7), and dielectric loss tangent (1.3 ⋅10−3) are reached with 0.5 to 2 vol.%. TiO2. Additions of TiH2 promote the formation of metallic films, mainly oriented along the pressing direction. The deviation of sintering temperature from the optimal value increases conduction-induced losses since structures with more defects and conducting phases form. It is shown that broadband (103–107 Hz) dielectric spectroscopy can be used to monitor the composite’s microstructure: the frequency of migration polarization dispersion provided information on the effective thickness of the conducting channel and the slope σ(ω) allowed the lattice and jump responses to be differentiated.

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Notes

  1. Physical meaning of the Debye shielding length corresponds to the average distance the electric field penetrates into semiconductor when the excitation of potential energy is small compared with the heat energy (i.e., the value of the surface potential ys will be less than kT/e).

References

  1. V. I. Kostenko, V. S. Seryogin, L. A. Gorshakova, and A. I. Vassilevich, “Highly thermally conductive aluminum nitride ceramics in space instrumentation: Application prospects,” in: Modern Information and Design Technologies [in Russian], Moscow (2003), pp. 250–256.

  2. L. Islamgazina, Jurgen Shultz-Harder, and S. Valev, “Criteria for the choice of substrates for power modules,” Comp. Techn., No. 38, 60–63 (2004).

  3. Electronic Register. Path to link: http://www.goodfellow.com/pdf/ 442_1111010.pdf.

  4. Y. G. Tkachenko, D. Z. Yurchenko, G. S. Oleynik, et al., “Self-reinforced materials based on aluminum nitride,” Powder Metall. Met. Ceram., No. 9, 69–74 (1992).

  5. S. Kume, M. Yasuoka, N. Omura, and K. Watari, “Effect of additives on dielectric loss of AlN ceramics,” Key Eng. Mater., 317–318, 845–848 (2006).

    Article  Google Scholar 

  6. S.-A. Jang and G. M. Choi, “Effect of dopants on the complex impedance and dielectric properties of aluminum nitride,” J. Am. Ceram. Soc., 75, No. 11, 3145–3148 (1992).

    Article  Google Scholar 

  7. M. R. Freedman, J. D. Kiser, and T. P. Herbell, “Factors influencing the ball milling of Si3N4 in water,” Ceram. Eng. Sci. Proc., 6, No. 7/8, 1124–1134 (1985).

    Article  Google Scholar 

  8. I. V. Brodnikovskaya, Y. V. Vorona, and V. Y. Petrovskii, “Producing high-temperature dielectrics and SiN-based heat-spreading substrates,” Keramika: Nauka i Zhizn, No. 3 (17), 14–29 (2012).

  9. Y. G. Tkachenko, R. A. Morozova, and D. Z. Yurchenko, “Effects of chemicothermal treatment of aluminum nitride powders on the structure and propertiex of the resulting hot-pressed ceramic,” Powder Metall. Met. Ceram., 34, No. 1/2, 69–73 (1995).

    Article  Google Scholar 

  10. D. M. Kazarnovskii and B. M. Tareyev, Test of Insulation Materials [in Russian], Energiya, Leningrad (1969), p. 296.

    Google Scholar 

  11. I. V. Brodnikovska, A. I. Derii, and V. Y. Petrovskii, “Broadband response of AlN ceramic composites,” Proc. Appl. Ceram., 8, No. 1, 47–51 (2014).

    Article  Google Scholar 

  12. K. K. Srivastava, M. Zulfequar, and A. Kumar, “Dielectric behavior of hot-pressed AlN ceramic exposed to inorganic acid vapors,” J. Mater. Sci., 25, No. 6, 2861–2865 (1990).

    Article  Google Scholar 

  13. P. Boch, J. C. Glandus, J. Jarrige, et al., “Sintering, oxidation and mechanical properties of hot-pressed aluminum nitride,” Ceram. Intern., 8, No. 1, 34–40 (1982).

    Article  Google Scholar 

  14. E. M. Trukhan, “Permittivity dispersion of heterogeneous systems,” Fizika Tverd. Tela, 4, No. 12, 3496–3511 (1962).

    Google Scholar 

  15. A. K. Joscher, “The “universal” dielectric response,” Nature, 267, 673–679 (1977).

    Article  Google Scholar 

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Authors and Affiliations

  1. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kiev, Ukraine

    I. V. Brodnikovska, A. I. Derii & V. Y. Petrovskii

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  1. I. V. Brodnikovska
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  2. A. I. Derii
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  3. V. Y. Petrovskii
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Correspondence to I. V. Brodnikovska.

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Translated from Poroshkovaya Metallurgiya, Vol. 53, Nos. 5–6 (497), pp. 55–66, 2014.

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Brodnikovska, I.V., Derii, A.I. & Petrovskii, V.Y. The Relative Density and Electrical Properties of AlN with Additives Depending on the Composition of the Mixture and the Temperature of hot Pressing. Powder Metall Met Ceram 53, 294–302 (2014). https://doi.org/10.1007/s11106-014-9616-0

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  • DOI: https://doi.org/10.1007/s11106-014-9616-0

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