Effects of Deposition Conditions on Carbon-Film Resistivity and Microstructure
Studies have been made on the dependence of carbon-film resistivity on deposition temperature (20–650 °C) and magnetron discharge power (50–650 W). Electron diffraction and Raman scattering have been used to examine the film structure. The results suggest that the structure is formed mainly by carbon atoms with sp2 bonding. In the range 20–450 °C, aromatic rings are formed together with graphitic clusters, and the degree of ordering increases with the condensation temperature. At T ≥ 500 °C, there is a change in the mechanism of C film growth, and graphitic-phase nuclei are formed and grow directly on the substrate. At a sufficiently high magnetron discharge power, there is uncontrolled heating of the condensation surface in the deposition of carbon films on ceramic substrates with low thermal conductivity. The growing film is affected by two competing processes: the temperature rise in the substrate favors graphitization, while the increase in the energy of the particles forming the film causes disordering. In the power range 50–400 W, the substrate temperature effect predominates, but above 400 W, the particle energy effect does.
Keywordsamorphous carbon film magnetron sputtering resistivity structure Raman scattering
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