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Loop Type of Inductively Coupled Thermal Plasmas System for Rapid Two-Dimensional Oxidation of Si Substrate Surface

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Abstract

This paper describes the use of loop-type inductively coupled thermal plasmas (loop-ICTP) for two-dimensional (2D) rapid oxidation processing. The unique and original loop-ICTP torch has been developed for large-area rapid materials processing. We applied the loop-ICTP to surface oxidation of a Si substrate as an example of materials processing. A part of the \(\hbox {Ar/O}_2\) loop-ICTP is formed, lying linearly on the surface of the substrate. In addition, scanning the Si substrate enabled 2D oxidation for the whole Si substrate surface. The uniformity of the oxide layer thickness and the oxidation rate were estimated by measuring the thickness of the oxide layer fabricated on the Si substrate. As a result, controlling the pressure offered more uniform oxide layer thickness, and gas injection onto the linear plasma on the substrate improved the uniformity of the oxide thickness. It should be noted that only three minutes of exposure of \(\hbox {Ar/O}_2\) loop-ICTP is sufficient to create an oxide layer with approximately 100 nm thickness for a 2-inch Si substrate surface.

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Authors and Affiliations

  1. Faculty of Electrical Engineering and Computer Science, Kanazawa University, Kakuma, Kanazawa, 920-1192, Japan

    Takumi Tsuchiya, Yasunori Tanaka, Y. Maruyama, A. Fujita, M. K. S. Tial, Y. Uesugi & T. Ishijima

  2. CV Research Corporation, Futamata, Ichikawa, 717-30, Japan

    T. Yukimoto & H. Kawaura

Authors
  1. Takumi Tsuchiya
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  2. Yasunori Tanaka
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  3. Y. Maruyama
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  4. A. Fujita
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  5. M. K. S. Tial
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  6. Y. Uesugi
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  7. T. Ishijima
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  8. T. Yukimoto
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  9. H. Kawaura
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Correspondence to Takumi Tsuchiya or Yasunori Tanaka.

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Tsuchiya, T., Tanaka, Y., Maruyama, Y. et al. Loop Type of Inductively Coupled Thermal Plasmas System for Rapid Two-Dimensional Oxidation of Si Substrate Surface. Plasma Chem Plasma Process 38, 599–620 (2018). https://doi.org/10.1007/s11090-018-9881-7

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  • DOI: https://doi.org/10.1007/s11090-018-9881-7

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