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Plasma Chemistry and Plasma Processing

, Volume 31, Issue 2, pp 257–257 | Cite as

Erratum to: Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide

  • Patrick J. Whitham
  • Dennis P. Strommen
  • Lisa D. Lau
  • René G. Rodriguez
Erratum

Erratum to: Plasma Chem Plasma Process DOI 10.1007/s11090-010-9278-8

In the online published article, it was neglected to note that the flow rates listed in the Table 1 for the DMSe flow were based on a nitrogen flow controller.

The nitrogen to DMSe flow rate conversion factor was not available for the MKS flow controller that was used. A conversion factor of 0.34 from a different flow controller manufacturer was recently found. The actual DMSe flow rate may be approximated by multiplying the table entry by 0.34. Thus for a flow rate of 5 sccm listed in the table for DMSe, the true flow rate is likely close to (0.34) × 5 sccm = 1.7 sccm.

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • Patrick J. Whitham
    • 1
  • Dennis P. Strommen
    • 1
  • Lisa D. Lau
    • 1
  • René G. Rodriguez
    • 1
  1. 1.Department of ChemistryIdaho State UniversityPocatelloUSA

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