Abstract
The present work aims at investigating the impact of thermal pretreatment and acid leaching (HCl–HF) on the boron removal efficiency of metallurgical grade silicon (MG-Si). The impact of various parameters, involving oxidation temperature (700–1200 °C), oxidation time (1–5 h) and acid leaching (4 mol L−1 HCl–3 mol L−1 HF), on the removal of boron from MG-Si was thoroughly explored. It was found that thermal oxidation resulted in an enhanced removal efficiency of boron from MG-Si. By employing MG-Si particles in the range of 75–106 μm in conjunction with acid leaching at 65 °C for 6 h, the boron content was decreased from 19.60 to 14.10 ppmw, offering a removal efficiency of ca. 28%. When the MG-Si powder was subjected to thermal oxidation at 1100 °C for 5 h before leaching, the boron concentration in the purified Si was reduced from 19.60 to 8.90 ppmw, giving an extraction efficiency of 54.59%. An extended characterization study, regarding the microstructure, morphology and chemical composition of both un-treated and treated samples, was conducted to gain insight into the underlying mechanism of boron removal under different conditions.
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References
T. L. A. Viana and K. Morita, ISIJ International 49, 2009 (783).
J. Li, L. Zhang, Y. Tan, et al., Vacuum 103, 2014 (33).
M. A. Xiaodong, J. Zhang, T. Wang, et al., Rare Metals 28, 2009 (221).
S. S. Zheng, T. A. Engh, M. Tangstad, et al., Separation and Purification Technology 82, 2011 (128).
M. A. Martorano, J. B. F. Neto, T. S. Oliveira, et al., Materials Science and Engineering B 176, 2011 (217).
丁明.非金属矿加工工程.北京: 化学工业出版社 (2003).
庞爱锁, 潘淼, 郭生士,等, 厦门大学学报(自然版) 48, 543 (2009).
M. Khalifa, M. Hajji and H. Ezzaouia, Physica Status Solidi Current Topics in Solid State Physics 9, 2012 (2088).
Y. H. Sun, Q. H. Ye, C. J. Guo, et al., Hydrometallurgy 139, 2013 (64).
J. S. Kim, J. S. Lee, B. Y. Jang, et al., Journal of the Korean Physical Society 65, 2014 (325).
Acknowledgements
This study was supported by the National Natural Science Foundation of China (Nos. 51461027, 51334002) and Open Fund of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization (No. CNMRCUTS1406).
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Tian, C., Lu, H., Wei, K. et al. Effect of Thermal Pretreatment and Acid Leaching on the Removal of Boron from Metallurgical Grade Silicon. Oxid Met 91, 213–224 (2019). https://doi.org/10.1007/s11085-018-9874-1
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DOI: https://doi.org/10.1007/s11085-018-9874-1