Effect of Dilute Tellurium and Selenium Additions on the High-Temperature Oxidation Resistance of Copper Alloys
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The high-temperature oxidation resistance of Cu–Te–Se alloys and Cu–Se alloys at 300, 400, 500 and 600 °C was studied by measuring weight gain per unit area after fixed oxidation times. The morphologies of the oxide scales formed were observed using a scanning electron microscope, with the distribution of element detected by an energy-dispersive spectrometer, and the phases identified using X-ray diffraction. The focus of this study was to understand the effects of tellurium (Te) and selenium (Se) additions on the high-temperature oxidation resistance of copper alloys. At the dilute levels studied (≤0.5 wt% total), these elements underwent internal oxidation. Meanwhile, new phases formed, which made oxidation films more compact and increased the adherence between the oxide film and the alloy matrix, as well as prevented oxygen diffusing in the copper alloy matrix, so the oxidation resistance of copper alloys was improved.
KeywordsCu–Te–Se alloy Cu–Se alloy Internal oxidation
The authors thank the Project (2012BAE06B01-04) supported by the National Science and Technology Pillar Program of China.
- 21.J. Yu and W. Yi, Shanghai Press of Science and Technology Press, 337 (1987) (in Chinese).Google Scholar