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Effect of SI Content on the Oxidation Resistance of Ti3Al1-x Si x C2 (x⩽ 0.25) Solid Solutions at 1000–1400°C in Air

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Abstract

The oxidation behavior of Ti3Al1-x Si x C2 (x ⩽ 0.25) solid solutions was investigated in flowing air at 1000–1400°C for up to 20 hrs. Similar to Ti3AlC2, Ti3Al1-x Si x C2 (x⩽ 0.15) solid solutions display excellent oxidation resistance at all temperatures because of the formation of the continuous α-Al2O3 protective layers. However, Al2(SiO4)O formed during oxidation of Ti3Al1-x Si x C2 (x=0.2 and 0.25) solid solutions at and above 1100°C, which is believed to be responsible for the deterioration of oxidation resistance of Ti3Al0.75Si0.25C2 at 1300°C. Additionally, Ti5Si3 was also found in the oxidized samples. This implies that Ti5Si3 precipitated from Ti3Al1-x Si x C2 solid solutions during oxidation. But it has been proven that Ti5Si3 has little effect on the oxidation resistance of the material, which is attributed to an interstitial carbon effect.

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Acknowledgments

This work was supported by the National Outstanding Young Scientist Foundation for Y. C. Zhou under Grant No. 59925208, Natural Sciences Foundation of China under Grant No. 50232040, No. 50302011, No.90403027, and ‘863’ project.

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Authors and Affiliations

  1. High-Performance Ceramic Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China

    J. X. Chen & Y. C. Zhou

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  1. J. X. Chen
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  2. Y. C. Zhou
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Correspondence to Y. C. Zhou.

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Chen, J.X., Zhou, Y.C. Effect of SI Content on the Oxidation Resistance of Ti3Al1-x Si x C2 (x⩽ 0.25) Solid Solutions at 1000–1400°C in Air. Oxid Met 65, 123–135 (2006). https://doi.org/10.1007/s11085-006-9007-0

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  • DOI: https://doi.org/10.1007/s11085-006-9007-0

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