High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer

Abstract

To enhance the performance of green light-emitting diodes (LEDs), numerical analysis of structural engineering of conventional LED has been presented. Our proposed structure with composition-graded electron blocking layer as well as thickness-graded last quantum barrier and last quantum well shows improved radiative recombination rate, lower efficiency droop and higher light output power at high current density in comparison to other devices. The observed improvements are because of better electron and hole confinement as well as improved hole transportation inside the active region.

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References

  1. Bernardini, F., Fiorentini, V.: Nonlinear behavior of spontaneous and piezoelectric polarization in III–V nitride alloys. Physica Status Solidi (a) 190, 65–73 (2002b)

    ADS  Article  Google Scholar 

  2. Cho, J., Park, J.H., Kim, J.K., Schubert, E.F.: White light-emitting diodes: history, progress, and future. Laser Photonics Rev. 11, 1600147 (2017)

    ADS  Article  Google Scholar 

  3. Choi, S., Kim, H.J., Kim, S.-S., Liu, J., Kim, J., Ryou, J.-H., et al.: Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer. Appl. Phys. Lett. 96, 221105 (2010)

    ADS  Article  Google Scholar 

  4. Fiorentini, V., Bernardini, F., Ambacher, O.: Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204–1206 (2002)

    ADS  Article  Google Scholar 

  5. Ghazai, A., Thahab, S., Hassan, H.A., Hassan, Z.: Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer. Opt. Express 19, 9245–9254 (2011)

    ADS  Article  Google Scholar 

  6. Guo, Y., Liang, M., Fu, J., Liu, Z., Yi, X., Wang, J., et al.: Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers. AIP Adv. 5, 037131 (2015)

    ADS  Article  Google Scholar 

  7. Han, S.-H., Lee, D.-Y., Lee, S.-J., Cho, C.-Y., Kwon, M.-K., Lee, S., et al.: Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 94, 231123 (2009)

    ADS  Article  Google Scholar 

  8. Iveland, J., Martinelli, L., Peretti, J., Speck, J.S., Weisbuch, C.: Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013)

    ADS  Article  Google Scholar 

  9. Ju, Z., Liu, W., Zhang, Z.-H., Tan, S.T., Ji, Y., Kyaw, Z., et al.: Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers. Appl. Phys. Lett. 102, 243504 (2013)

    ADS  Article  Google Scholar 

  10. Kim, S.J., Kim, T.G.: Numerical study of enhanced performance in InGaN light-emitting diodes with graded-composition AlGaInN barriers. J. Opt. Soc. Korea 17, 16–21 (2013)

    Article  Google Scholar 

  11. Kim, M.-H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., et al.: Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91, 183507 (2007)

    ADS  Article  Google Scholar 

  12. Krames, M.R., Shchekin, O.B., Mueller-Mach, R., Mueller, G.O., Zhou, L., Harbers, G., et al.: Status and future of high-power light-emitting diodes for solid-state lighting. J. Display Technol. 3, 160–175 (2007)

    ADS  Article  Google Scholar 

  13. Laubsch, A., Sabathil, M., Baur, J., Peter, M., Hahn, B.: High-power and high-efficiency InGaN-based light emitters. IEEE Trans. Electron Devices 57, 79–87 (2009)

    ADS  Article  Google Scholar 

  14. Li, H., Li, P., Kang, J., Li, Z., Zhang, Y., Li, Z., et al.: Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well. Appl. Phys. Express 6, 052102 (2013)

    ADS  Article  Google Scholar 

  15. Lu, T., Li, S., Liu, C., Zhang, K., Xu, Y., Tong, J., et al.: Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer. Appl. Phys. Lett. 100, 141106 (2012)

    ADS  Article  Google Scholar 

  16. Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., Kurimoto, E.: Optical bandgap energy of wurtzite InN. Appl. Phys. Lett. 81, 1246–1248 (2002)

    ADS  Article  Google Scholar 

  17. Muhammad, U., Nawaz, N., Saba, K., Karimov, K., Muhammad, N.: Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes. Optik 172, 1193–1198 (2018)

    ADS  Article  Google Scholar 

  18. Nakamura, S., Pearton, S., Fasol, G.: The Blue Laser Diode: The Complete Story. Springer, Berlin (2000)

    Google Scholar 

  19. Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Physica Status Solidi (a) 207, 2217–2225 (2010)

    ADS  Article  Google Scholar 

  20. Saha, M., Biswas, A., Karan, H.: Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures. Opt. Mater. 77, 104–110 (2018)

    ADS  Article  Google Scholar 

  21. Salhi, A., Alanzi, M., Alonazi, B.: Effect of the quantum-well shape on the performance of InGaN-based light-emitting diodes emitting in the 400–500-nm range. J. Display Technol. 11, 217–222 (2014)

    ADS  Article  Google Scholar 

  22. Schubert, M.F., Xu, J., Kim, J.K., Schubert, E.F., Kim, M.H., Yoon, S., et al.: Polarization-matched Ga In N∕ Al Ga In N multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 93, 041102 (2008)

    ADS  Article  Google Scholar 

  23. Streiff, M., Fichtner, W., Witzig, A.: Vertical-cavity surface-emitting lasers: single-mode control and self-heating effects. In: Optoelectronic Devices, Springer, Berlin, pp. 21–247 (2005)

  24. Usman, M., Anwar, A.-R., Saba, K., Munsif, M.: Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes. Ceram. Int. 46(11), 18464–18468 (2020a)

    Article  Google Scholar 

  25. Usman, M., Munsif, M., Anwar, A.-R.: Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes. Opt. Commun. 464, 125493 (2020b)

    Article  Google Scholar 

  26. Usman, M., Munsif, M., Anwar, A.-R., Jamal, H., Malik, S., Islam, N.U.: Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer. Superlattices Microstruct. 139, 106417 (2020c)

    Article  Google Scholar 

  27. Usman, M., Kim, H., Shim, J.-I., Shin, D.-S.: Measurement of piezoelectric field in single-and double-quantum-well green LEDs using electroreflectance spectroscopy. Jpn. J. Appl. Phys. 53, 098002 (2014)

    ADS  Article  Google Scholar 

  28. Usman, M., Saba, K., Jahangir, A., Kamran, M., Muhammad, N.: Electromechanical fields and their influence on the internal quantum efficiency of GaN-based light-emitting diodes. Acta Mech. Solida Sin. 31, 383–390 (2018a)

    Article  Google Scholar 

  29. Usman, M., Saba, K., Han, D.-P., Muhammad, N.: Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer. Superlattices Microstruct. 113, 585–591 (2018b)

    ADS  Article  Google Scholar 

  30. Usman, M., Mushtaq, U., Zheng, D.-G., Han, D.-P., Muhammad, N.: Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes. Mater. Res. Express 6, 045909 (2019a)

    ADS  Article  Google Scholar 

  31. Usman, M., Munsif, M., Anwar, A.R., Mushtaq, U., Imtiaz, W.A., Han, D.-P., et al.: Zigzag-shaped quantum well engineering of green light-emitting diode. Superlattices Microstruct. 132, 106164 (2019b)

    Article  Google Scholar 

  32. Usman, M., Mushtaq, U., Zheng, D.-G., Han, D.-P., Rafiq, M., Muhammad, N.: Enhanced internal quantum efficiency of bandgap-engineered green W-shaped quantum well light-emitting diode. Appl. Sci. 9, 77 (2019c)

    Article  Google Scholar 

  33. Usman, M., Anwar, A.-R., Munsif, M., Han, D.-P., Saba, K.: Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region. Physica E: Low-dimensional Syst. Nanostruct. 117, 113826 (2019d)

    Article  Google Scholar 

  34. Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., et al.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101 (2013)

    ADS  Article  Google Scholar 

  35. Vurgaftman, I., Meyer, J.N.: Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94, 3675–3696 (2003)

    ADS  Article  Google Scholar 

  36. Vurgaftman, I., Meyer, J.Á., Ram-Mohan, L.Á.: Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001)

    ADS  Article  Google Scholar 

  37. Wang, C., Ke, C., Lee, C., Chang, S., Chang, W., Li, J., et al.: Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer. Appl. Phys. Lett. 97, 261103 (2010a)

    ADS  Article  Google Scholar 

  38. Wang, C., Chang, S., Chang, W., Li, J., Lu, Y., Li, Z., et al.: Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells. Appl. Phys. Lett. 97, 181101 (2010b)

    ADS  Article  Google Scholar 

  39. Yang, G., Chang, J., Wang, J., Zhang, Q., Xie, F., Xue, J., et al.: Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer. Superlattices Microstruct. 83, 1–8 (2015)

    ADS  Article  Google Scholar 

  40. Yen, S.-H., Tsai, M.-L., Tsai, M.-C., Chang, S.-J., Kuo, Y.-K.: Investigation of optical performance of InGaN MQW LED with thin last barrier. IEEE Photonics Technol. Lett. 22, 1787–1789 (2010)

    ADS  Article  Google Scholar 

  41. Zhang, Z., Sun, H., Li, X., Sun, H., Zhang, C., Fan, X., et al.: Performance enhancement of blue light-emitting diodes with an undoped AlGaN electron-blocking layer in the active region. J. Display Technol. 12, 573–576 (2015)

    ADS  Article  Google Scholar 

  42. Zheng, Z., Chen, Z., Chen, Y., Wu, H., Huang, S., Fan, B., et al.: Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers. Appl. Phys. Lett. 102, 241108 (2013)

    ADS  Article  Google Scholar 

  43. Zheng, H., Sun, H., Yang, M., Cai, J., Li, X., Sun, H., et al.: Effect of polarization field and nonradiative recombination lifetime on the performance improvement of step stage InGaN/GaN multiple quantum well LEDs. J. Display Technol. 11, 776–782 (2015)

    ADS  Article  Google Scholar 

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Acknowledgements

We are indebted to Semiconductor Photonics Laboratory, Hanyang University, South Korea for providing the needed resources.

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Correspondence to Muhammad Usman.

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Usman, M., Munsif, M. & Anwar, A. High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer. Opt Quant Electron 52, 320 (2020). https://doi.org/10.1007/s11082-020-02436-z

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Keywords

  • InGaN
  • Light-emitting diode
  • Efficiency