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High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer

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Abstract

To enhance the performance of green light-emitting diodes (LEDs), numerical analysis of structural engineering of conventional LED has been presented. Our proposed structure with composition-graded electron blocking layer as well as thickness-graded last quantum barrier and last quantum well shows improved radiative recombination rate, lower efficiency droop and higher light output power at high current density in comparison to other devices. The observed improvements are because of better electron and hole confinement as well as improved hole transportation inside the active region.

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Acknowledgements

We are indebted to Semiconductor Photonics Laboratory, Hanyang University, South Korea for providing the needed resources.

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  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23460, Pakistan

    Muhammad Usman, Munaza Munsif & Abdur-Rehman Anwar

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  1. Muhammad Usman
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  2. Munaza Munsif
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  3. Abdur-Rehman Anwar
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Correspondence to Muhammad Usman.

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Usman, M., Munsif, M. & Anwar, AR. High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer. Opt Quant Electron 52, 320 (2020). https://doi.org/10.1007/s11082-020-02436-z

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