Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well

Abstract

Linear and nonlinear optical properties of GaSb quantum ring inside AlxGa1xAs/GaAs/AlxGa1xAs quantum well (QW) and AlAs/GaAs/InGaAs/AlAs double QW have been theoretically investigated. The effects of the Al concentration in the barrier, the widths of the layers, the position of the quantum ring inside the wells and the incident optical intensity on linear and nonlinear absorption and refractive index, associated to the ground excitonic state, have been explored. We found that by varying the different parameters of the studied structures and the incident optical intensity, one can manipulate the linear and nonlinear absorption coefficient and refractive index. These results make the studied systems a promising candidate for application in tunable nano-optoelectronic devices.

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References

  1. Aspnes, D.E., Studna, A.A.: Dielectric functions and optical parameters of si, ge, gap, gaas, gasb, inp, inas, and insb from 1.5 to 6.0 ev. Phys. Rev. B 27, 1009 (1983). https://doi.org/10.1103/PhysRevB.27.985

    Article  Google Scholar 

  2. Ben Mansour, A., Kehili, M.S., Melliti, A., Maaref, M.A.: Study of effects of size and Ga mole content of In1−xGaxAs/GaAs quantum ring on excitonic properties using the variational calculation. Physica B Condens. Matter 523, 78–84 (2017). https://doi.org/10.1016/j.physb.2017.08.026

    ADS  Article  Google Scholar 

  3. Fomin, V.M., Gladilin, V.N., Klimin, S.N., Devreese, J.T., Kleemans, N.A.J.M., Koenraad, P.M.: Theory of electron energy spectrum and Aharonov-Bohm effect in self-assembled InxGa1−xAs quantum rings in GaAs. Phys. Rev. B 76, 235320 (2007). https://doi.org/10.1103/PhysRevB.76.235320

    ADS  Article  Google Scholar 

  4. Fujita, H., Carrington, P.J., Wagener, M.C., Botha, J.R., Marshall, A.R.J., James, J., Krier, A., Lee, K.-H., Ekins-Daukes, N.J.: Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration. Prog. Photovolt. 23, 1896–1900 (2015). https://doi.org/10.1002/pip.2615

    Article  Google Scholar 

  5. Hayne, M., Young, R.J., Smakman, E.P., Nowozin, T., Hodgson, P., Garleff, J.K., Rambabu, P., Koenraad, P.M., Marent, A., Bonato, L., Schliwa, A., Bimberg, D.: The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. J. Phys. D Appl. Phys. 46, 264001 (2013). https://doi.org/10.1088/0022-3727/46/26/264001

    ADS  Article  Google Scholar 

  6. Hodgson, P.D., Hayne, M., Robson, A.J., Zhuang, Q.D., Danos, L.: GaSb quantum rings in GaAs/Al {sub x} Ga {sub 1− x} As quantum wells. J. Appl. Phys. 119, 044305 (2016). https://doi.org/10.1063/1.4940880

    ADS  Article  Google Scholar 

  7. Kehili, M.S., Ben Mansour, A., Sellami, R., Melliti, A.: Electronic and optical properties of charge carriers in a GaSb quantum ring in a GaAs/Al0. 6Ga0. 4As quantum well. Semicond. Sci. Technol. 33, 115027 (2018). https://doi.org/10.1088/1361-6641/aae3b3

    Article  Google Scholar 

  8. Koc, F., Sahin, M.: Electronic and optical properties of single excitons and biexcitons in type-II quantum dot nanocrystals. J. Appl. Phys. 115, 193701 (2014). https://doi.org/10.1063/1.4876323

    ADS  Article  Google Scholar 

  9. Laghumavarapu, R.B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L.F.: GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response. Appl. Phys. Lett. 90, 173125 (2007). https://doi.org/10.1063/1.2734492

    ADS  Article  Google Scholar 

  10. Lin, W.-H., Wang, K.-W., Chang, S.-W., Shih, M.-H., Lin, S.-Y.: Type-II GaSb/GaAs coupled quantum rings: room-temperature luminescence enhancement and recombination lifetime elongation for device applications. Appl. Phys. Lett. 101, 031906 (2012). https://doi.org/10.1063/1.4737443

    ADS  Article  Google Scholar 

  11. Liu, W.-S., Tseng, H.-L., Kuo, P.-C.: Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 131 μm. Opt. Exp. 22, 18860–18869 (2014). https://doi.org/10.1364/OE.22.018860

    ADS  Article  Google Scholar 

  12. Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N.: 106 years extrapolated hole storage time in GaSb/AlAs. Appl. Phys. Lett. 91, 242109 (2007). https://doi.org/10.1063/1.2824884

    ADS  Article  Google Scholar 

  13. Melliti, A., Maaref, M.A., Sermage, B., Bloch, J., Saidi, F., Hassen, F., Maaref, H.: Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots. Physica E 28, 22–27 (2005). https://doi.org/10.1016/j.physe.2005.01.011

    ADS  Article  Google Scholar 

  14. Negi, C.M.S., Gupta, S.K., Kumar, D., Kumar, J.: Nonlinear optical absorption and refraction in a strained anisotropic multi-level quantum dot system. Superlattices Microstruct. 60, 462–474 (2013). https://doi.org/10.1016/j.spmi.2013.05.023

    ADS  Article  Google Scholar 

  15. Nowozin, T., Bonato, L., Högner, A., Wiengarten, A., Bimberg, D., Lin, W.-H., Lin, S.-Y., Reyner, C.J., Liang, B.L., Huffaker, D.L.: 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots. Appl. Phys. Lett. 102, 052115 (2013). https://doi.org/10.1063/1.4791678

    ADS  Article  Google Scholar 

  16. Ouerghui, W., Martinez-Pastor, J., Gomis, J., Melliti, A., Maaref, M.A., Granados, D., Garcia, J.M.: Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings. Eur. Phys. J. Appl. Phys. 35, 159–163 (2006). https://doi.org/10.1051/epjap:2006088

    ADS  Article  Google Scholar 

  17. Sabaeian, M., Shahzadeh, M.: Self-assembled strained pyramid-shaped InAs/GaAs quantum dots: the effects of wetting layer thickness on discrete and quasi-continuum levels. Physica E 61, 62–68 (2014). https://doi.org/10.1016/j.physe.2014.03.015

    ADS  Article  Google Scholar 

  18. Şahin, M.: Third-order nonlinear optical properties of a one-and two-electron spherical quantum dot with and without a hydrogenic impurity. J. Appl. Phys. 106, 063710 (2009). https://doi.org/10.1063/1.3225100

    ADS  Article  Google Scholar 

  19. Sellami, N., Melliti, A., Othmen, R., Maaref, M.A., Kuszelewiez, R., Lemaître, A.: The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots. J. Lumin. 131, 1641–1644 (2011). https://doi.org/10.1016/j.jlumin.2011.04.011

    Article  Google Scholar 

  20. Smakman, E.P., Garleff, J.K., Young, R.J., Hayne, M., Rambabu, P., Koenraad, P.M.: GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Appl. Phys. Lett. 100, 142116 (2012). https://doi.org/10.1063/1.3701614

    ADS  Article  Google Scholar 

  21. Stier, O., Grundmann, M., Bimberg, D.: Electronic and optical properties of strained quantum dots modeled by 8-band k·p theory. Phys. Rev. B 59, 5701 (1998). https://doi.org/10.1103/PhysRevB.59.5688

    Article  Google Scholar 

  22. Tatebayashi, J., Khoshakhlagh, A., Huang, S.H., Balakrishnan, G., Dawson, L.R., Huffaker, D.L., Bussian, D.A., Htoon, H., Klimov, V.: Lasing characteristics of GaSb/ GaAs self-assembled quantum dots embedded in an InGaAs quantum well. Appl. Phys. Lett. 90, 261115 (2007). https://doi.org/10.1063/1.2752018

    ADS  Article  Google Scholar 

  23. Tsai, C.-P., Hsu, S.-C., Lin, S.-Y., Chang, C.-W., Tu, L.-W., Chen, K.C., Lay, T.-S., Lin, C.-C.: Type II GaSb quantum ring solar cells under concentrated sunlight. Opt. Exp. 22(S2), A359–A364 (2014). https://doi.org/10.1364/OE.22.00A359

    Article  Google Scholar 

  24. Wagener, M.C., Carrington, P.J., Botha, J.R., Krier, A.: Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells. Appl. Phys. Lett. 103, 063902 (2013). https://doi.org/10.1063/1.4818126

    ADS  Article  Google Scholar 

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Correspondence to Adnen Melliti.

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Kehili, M.S., Sellami, R., Ben Mansour, A. et al. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well. Opt Quant Electron 52, 321 (2020). https://doi.org/10.1007/s11082-020-02435-0

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Keywords

  • GaSb quantum ring
  • Exciton
  • Linear absorption coefficient
  • Nonlinear absorption coefficient
  • Linear refractive index
  • Nonlinear refractive index