Abstract
In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical–lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal–lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
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Acknowledgements
This work is supported by the German Federal Ministry of Education and Research contract 13N14005 as part of the EffiLAS/HotLas project and by the EUROSTARS Project E!10524 HIP-Lasers.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 18.
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Radziunas, M., Fuhrmann, J., Zeghuzi, A. et al. Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers. Opt Quant Electron 51, 69 (2019). https://doi.org/10.1007/s11082-019-1792-1
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DOI: https://doi.org/10.1007/s11082-019-1792-1