Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses
- 54 Downloads
Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization threshold field is found to depend linearly on frequency for the fields oscillating at frequencies much higher than reciprocal momentum relaxation time. Good agreement between calculations and available experimental data has been obtained.
KeywordsInAs Impact ionization Terahertz Monte Carlo simulation
We are sincerely thankful to prof. Jonas Gradauskas for stimulating discussions and critical reading of the manuscript.
- Ganichev, S.D., Dmitriev, A.P., Emel’yanov, S.A., Terent’ev, Y.V., Yaroshetskii, I.D., Yassievich, I.N.: Impact ionization in semiconductors under the influence of the electric field of an optical wave. Sov. Phys. JETP 63, 256–263 (1986)Google Scholar
- Ganichev, S.D., Prettl, W.: Intense Terahertz Excitation of Semiconductors, pp. 237–267. Oxford University Press, New York (2006)Google Scholar
- Hoffmann, M.C., Hebling, J., Hwang, H.Y., Yeh, K.-L., Nelson, K.A.: Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy. Phys. Rev. B 79, 161201-1– 161201-4 (2009)Google Scholar
- Jacoboni, C., Lugli, P.: The Monte Carlo Method for Semiconductor Device Simulation, pp. 104–161. Springer, Wien (1989)Google Scholar
- Krotkus, A., Dobrovolskis, Z.: Electrical conductivity of Narrow-Gap Semiconductors, pp. 131–133. Mokslas, Vilnius (1988)Google Scholar
- Mickevičius, R., Raguotis, R., Reklaitis, A.: Electron heating in InSb in the presence of impact ionization. Phys. Technol. Poluprovodn. 16, 358–361 (1982)Google Scholar