Numerical analysis of tin incorporated group IV alloy based MQWIP

  • Prakash Pareek
  • Ravi Ranjan
  • Mukul K. Das
Part of the following topical collections:
  1. 2017 Numerical Simulation of Optoelectronic Devices


In this paper, a detailed theoretical analysis of the responsivity and frequency response in a strain balanced SiGeSn/GeSn multiple quantum well infrared photodetector (MQWIP) is presented. Initially, responsivity is calculated by solving continuity and rate equation at steady state considering inter well carrier transport mechanism. Transient response of the device is also derived to calculate bandwidth of the detector. Result shows that responsivity increases but bandwidth decreases with increase in number of wells. Further, responsivity bandwidth product in the MQWIP for different number of wells is also determined to study this trade-off.


GeSn MQWIP Responsivity Bandwidth 



This work is partly supported by the Center of Excellence in Renewable Energy, project under MHRD, Govt. of India (F. No. 5-6/2013-TS-VII) at Indian Institute of Technology (Indian School of Mines) Dhanbad, India.


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Authors and Affiliations

  1. 1.Department of Electronics EngineeringIndian Institute of Technology (Indian School of Mines)DhanbadIndia
  2. 2.Department of Electronics and Communication EngineeringVaagdevi College of Engineering (Autonomous)Bollikunta, WarangalIndia
  3. 3.Department of Electrical and Electronics EngineeringDarbhanga College of EngineeringDarbhangaIndia

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