Improvement of minority carrier collection and quantum efficiency in graphene planar silicon solar cell
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Graphene planar silicon heterojunction solar cells were investigated using 2D physics-based TCAD simulation. A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. Process modeling has been carried out especially for highly boron diffusion. Using this model, the effect of the highly doped surface inverse region located as 0.08, 0.22, 0.35 μm on the photovoltaic performance has been studied. The obtained J–V characteristic is analyzed to study effects of the inverse region depth and doping concentration on Schottky junction modification. The proposed design proves to be highly efficient in 0.2 h annealing, which provides a new platform to further enhance the performance of graphene planar solar cell.
KeywordsMinority carrier Boron doped Graphene silicon Schottky barrier
The project was supported by research fund of Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology (No. SKLPSTKF201505), Suzhou Industry Technological Innovation (No. SYG201602), Changshu Industry Technological Innovation (No. CQ201602), and National Natural Science Foundation of China (Grant Nos. 61674022, 61404012, and 61306122).
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