Abstract
We report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by mean of photoluminescence (PL) and time-resolved PL measurements. The temperature-dependent PL spectra are discussed in terms of the inhomogeneous size distribution of the QDs and the carrier tunneling process from small to large QDs. The dependence of the photoluminescence decay time on the emission-wavelength is attributed to lateral carriers’ transfer within QDs with an interdot carrier tunneling time of 910 ps under low excitation conditions.
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This article is part of the Topical Collection on Photonic Science and Engineering on the Micro/Nano Scale.
Guest edited by Yen-Hsun Su, Lei Liu, Yiting Yu and Yikun Liu.
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Zaaboub, Z., Hassen, F., Naffouti, M. et al. Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots. Opt Quant Electron 49, 142 (2017). https://doi.org/10.1007/s11082-017-0975-x
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DOI: https://doi.org/10.1007/s11082-017-0975-x