Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
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At cryogenic temperatures the electron–hole plasma in semiconductors becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift–diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications. Moreover, the method can be applied to wide band gap semiconductors where similar numerical issues occur already at room temperature.
KeywordsCryogenic temperatures Drift–diffusion Transport Device simulation Wide band gap semiconductors
This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center 787 Semiconductor Nanophotonics. The authors would like to thank Jürgen Fuhrmann for useful discussions and one of the reviewers for encouraging us to extend our considerations to wide band gap semiconductors.
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