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Experimental and theoretical research on noise behaviors of epitaxial Si:P blocked-impurity-band detectors

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Abstract

Noise behaviors of the epitaxial Si:P blocked-impurity-band (BIB) detectors have been investigated by experimental and theoretical tools. The device structure and cryogenic testing systems are presented in detail. The dependence of dark current, background current and device noise on bias voltage at temperature of 3.4 K have been measured. The noise components of epitaxial Si:P BIB detectors we have fabricated are analyzed. The results show that under the room-temperature background, the background shot noise can completely dominate device noise, and thus become the limiting factor of the device performance.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61404120).

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Authors and Affiliations

  1. No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, 200331, China

    Bingbing Wang, Xiaodong Wang, Yulu Chen, Deliang Zhou, Liwei Hou, Wei Xie & Ming Pan

  2. Laboratory of Advanced Material, Fudan University, Shanghai, 200438, China

    Xiaoyao Chen

Authors
  1. Bingbing Wang
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  2. Xiaodong Wang
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  3. Xiaoyao Chen
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  4. Yulu Chen
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  5. Deliang Zhou
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  6. Liwei Hou
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  7. Wei Xie
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  8. Ming Pan
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Corresponding authors

Correspondence to Xiaodong Wang or Xiaoyao Chen.

Additional information

This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices 2016.

Guest edited by Yuh-Renn Wu, Weida Hu, Slawomir Sujecki, Silvano Donati, Matthias Auf der Maur and Mohamed Swillam.

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Wang, B., Wang, X., Chen, X. et al. Experimental and theoretical research on noise behaviors of epitaxial Si:P blocked-impurity-band detectors. Opt Quant Electron 48, 517 (2016). https://doi.org/10.1007/s11082-016-0777-6

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