Influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires
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For the optimization of p-type doping processing of GaN nanowires, the influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires are researched on the basis of first principles. The formation energy, work function, band structures, optical properties are calculated and discussed. Results show that ideal p-type GaN nanowire can be obtained through Mg doing process. However, the existence of N vacancy will weaken the p-type conductivity of Mg-doped GaN nanowires. N vacancies are urgently needed to be avoided during Mg doping process of GaN nanowires.
KeywordsMg doping N vacancy GaN nanowires Optoelectronic properties
The authors appreciate Meishan Wang of School of Information and Electrical Engineering, Ludong University, for offering the CASTEP. This work is sponsored by The Natural Science Foundation of Jiangsu Province-China(Grant No. BK20130767), The Fundamental Research Funds for the Central Universities-China(Grant No. 30916011206), The Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institution, China (Grant No. KYLX16_0425) and The Six Talent Peaks Project in Jiangsu Province-China(Grant No. 2015-XCL-008).
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