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Flexible graphene field effect transistor with ferroelectric polymer gate

  • Xudong Wang
  • Minghua Tang
  • Yan Chen
  • Guangjian Wu
  • Hai Huang
  • Xiaolin Zhao
  • Bobo Tian
  • Jianlu Wang
  • Shuo Sun
  • Hong Shen
  • Tie Lin
  • Jinglan Sun
  • Xiangjian Meng
  • Junhao Chu
Article

Abstract

A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.

Keywords

CVD graphene Flexible electronics P(VDF-TrFE) Ferroelectric polymer gating 

Notes

Acknowledgments

This work is supported by the Major State Basic Research Development Program (Grant No. 2013CB922302), the Natural Science Foundation of China (Grant Nos.61474131, 61440063, 61274107, 51472210 and 61404113), the Natural Science Foundation of Shanghai (13JC1406000), the Key Project of Hunan Provincial NSFC (Grant No. 13JJ2023) and Hunan Provincial Innovation Foundation for Postgraduate (Grant Nos. CX2013B261 and CX2014B267).

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Xudong Wang
    • 1
    • 2
    • 3
  • Minghua Tang
    • 1
    • 2
  • Yan Chen
    • 3
  • Guangjian Wu
    • 3
  • Hai Huang
    • 3
  • Xiaolin Zhao
    • 3
  • Bobo Tian
    • 3
  • Jianlu Wang
    • 3
  • Shuo Sun
    • 3
  • Hong Shen
    • 3
  • Tie Lin
    • 3
  • Jinglan Sun
    • 3
  • Xiangjian Meng
    • 3
  • Junhao Chu
    • 3
  1. 1.Hunan Provincial Key Laboratory of Key Film Materials and Application for Equipments, School of Material Sciences and EngineeringXiangtan UniversityXiangtanChina
  2. 2.Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and EngineeringXiangtan UniversityXiangtanChina
  3. 3.National Laboratory for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina

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