Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes

  • Z. J. Quan
  • J. L. Liu
  • F. Fang
  • G. X. Wang
  • F. Y. Jiang


Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes with different density and size of V-shaped pits are numerically investigated. Simulation results show that internal quantum efficiency is firstly enhanced and then reduced with an increase in the density and size of pits. It is found that the area ratio of pits accounting for the last QW is the key factor. The optimal value of area ratio is about 50 % at the current density of 35A/cm2.


InGaN/GaN multiple quantum well Light-emitting diodes V-shaped pits Simulation 



The authors acknowledge the support from National Natural Science Foundation of China (Grant No. 11364034 and No. 61334001), the Key Technology Research and Development Program of Jiangxi province (No. 20141BBE50035 and 20151BBE50111).


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Z. J. Quan
    • 1
  • J. L. Liu
    • 1
  • F. Fang
    • 1
  • G. X. Wang
    • 1
  • F. Y. Jiang
    • 1
  1. 1.National Institute of LED on Sillicon SubstrateNanchang UniversityNanchangPeople’s Republic of China

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