Wavelength selective UV/visible metal-semiconductor-metal photodetectors

  • S. V. Averin
  • P. I. Kuznetzov
  • V. A. Zhitov
  • L. Yu. Zakharov
  • V. M. Kotov
  • N. V. Alkeev


We report on growth, fabrication and characterization of metal-semiconductor-metal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. Detecting properties of the MSM-heterophotodiodes have been investigated. We observe electrically tunable spectral response of these detectors. At low bias detectors provide narrowband response at the wavelength 350 nm with FWHM = 18 nm. Increasing bias shifts maximum detector sensitivity at the wavelength 450 nm while narrowband response at 350 nm remains. Thus, a two-color detection of light emission is provided.


Metal-semiconductor-metal (MSM) diode Heterostructure Dark current Spectral response 



This work was partly supported by RFBR (Russian Fund of Basic Research), Grants No. 14-07-00014, 15-07-02312.


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • S. V. Averin
    • 1
  • P. I. Kuznetzov
    • 1
  • V. A. Zhitov
    • 1
  • L. Yu. Zakharov
    • 1
  • V. M. Kotov
    • 1
  • N. V. Alkeev
    • 1
  1. 1.Fryazino Branch of the Kotel’nikov Institute of Radioengineering and Electronics of Russian Academy of SciencesFryazinoRussia

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